Issued Patents All Time
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11295825 | Multi-time programmable non-volatile memory cell | Nguyen Duc Bui, Binh Ly | 2022-04-05 |
| 10217521 | Multi-time programmable non-volatile memory cell | Nguyen Duc Bui, Binh Ly | 2019-02-26 |
| 7307319 | High-voltage protection device and process | Nui Chong | 2007-12-11 |
| 7024646 | Electrostatic discharge simulation | Stewart Logie, Nui Chong | 2006-04-04 |
| 6703305 | Semiconductor device having metallized interconnect structure and method of fabrication | Nguyen Duc Bui | 2004-03-09 |
| 6274419 | Trench isolation of field effect transistors | Andre Stolmeijer, Yowjuang W. Liu, Craig S. Sander | 2001-08-14 |
| 6184108 | Method of making trench isolation structures with oxidized silicon regions | Yowjuang W. Liu | 2001-02-06 |
| 6097072 | Trench isolation with suppressed parasitic edge transistors | — | 2000-08-01 |
| 6064104 | Trench isolation structures with oxidized silicon regions and method for making the same | Yowjuang W. Liu | 2000-05-16 |
| 6011272 | Silicided shallow junction formation and structure with high and low breakdown voltages | Nader Radjy | 2000-01-04 |
| 5973372 | Silicided shallow junction transistor formation and structure with high and low breakdown voltages | Nader Radjy | 1999-10-26 |
| 5877066 | Narrow width trenches for field isolation in integrated circuits | Andre Stolmeijer | 1999-03-02 |
| 5861104 | Trench isolation with rounded top and bottom corners and edges | — | 1999-01-19 |
| 5780353 | Method of doping trench sidewalls before trench etching | — | 1998-07-14 |
| 5777370 | Trench isolation of field effect transistors | Andre Stolmeijer, Yowjuang W. Liu, Craig S. Sander | 1998-07-07 |
| 5742090 | Narrow width trenches for field isolation in integrated circuits | Andre Stolmeijer | 1998-04-21 |
| 5215937 | Optimizing doping control in short channel MOS | Darrell M. Erb, Rajat Rakkhit | 1993-06-01 |