Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6486056 | Process for making integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level | Nicholas F. Pasch | 2002-11-26 |
| 6329720 | Tungsten local interconnect for silicon integrated circuit structures, and method of making same | Weidan Li, Wen-Chin Yeh | 2001-12-11 |
| 6239491 | Integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level, and process for making same | Nicholas F. Pasch | 2001-05-29 |
| 5920104 | Reducing reverse short-channel effect with light dose of P with high dose of as in n-channel LDD | Deepak Nayak, Felicia Heiler | 1999-07-06 |
| 5817536 | Method to optimize p-channel CMOS ICs using Q.sub.bd as a monitor of boron penetration | Deepak Nayak, Ming-Yin Hao | 1998-10-06 |
| 5786254 | Hot-carrier reliability in submicron MOS devices by oxynitridation | Ming-Yin Hao | 1998-07-28 |
| 5757204 | "Method and circuit for detecting boron (""B"") in a semiconductor device using threshold voltage (""V"") fluence test" | Deepak Nayak, Ming-Yin Hao | 1998-05-26 |
| 5674781 | Landing pad technology doubled up as a local interconnect and borderless contact for deep sub-half micrometer IC application | Richard J. Huang, Robin Cheung, Raymond T. Lee | 1997-10-07 |
| 5654589 | Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC application | Richard J. Huang, Robin Cheung, Raymond T. Lee | 1997-08-05 |
| 5215937 | Optimizing doping control in short channel MOS | Darrell M. Erb, Farrokh Omid-Zohoor | 1993-06-01 |