| 6486056 |
Process for making integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level |
Nicholas F. Pasch |
2002-11-26 |
| 6329720 |
Tungsten local interconnect for silicon integrated circuit structures, and method of making same |
Weidan Li, Wen-Chin Yeh |
2001-12-11 |
| 6239491 |
Integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level, and process for making same |
Nicholas F. Pasch |
2001-05-29 |
| 5920104 |
Reducing reverse short-channel effect with light dose of P with high dose of as in n-channel LDD |
Deepak Nayak, Felicia Heiler |
1999-07-06 |
| 5817536 |
Method to optimize p-channel CMOS ICs using Q.sub.bd as a monitor of boron penetration |
Deepak Nayak, Ming-Yin Hao |
1998-10-06 |
| 5786254 |
Hot-carrier reliability in submicron MOS devices by oxynitridation |
Ming-Yin Hao |
1998-07-28 |
| 5757204 |
"Method and circuit for detecting boron (""B"") in a semiconductor device using threshold voltage (""V"") fluence test" |
Deepak Nayak, Ming-Yin Hao |
1998-05-26 |
| 5674781 |
Landing pad technology doubled up as a local interconnect and borderless contact for deep sub-half micrometer IC application |
Richard J. Huang, Robin Cheung, Raymond T. Lee |
1997-10-07 |
| 5654589 |
Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC application |
Richard J. Huang, Robin Cheung, Raymond T. Lee |
1997-08-05 |
| 5215937 |
Optimizing doping control in short channel MOS |
Darrell M. Erb, Farrokh Omid-Zohoor |
1993-06-01 |
