Issued Patents All Time
Showing 51–75 of 133 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9024378 | Device structure and manufacturing method using HDP deposited source-body implant block | Anup Bhalla, Francois Hebert, Sung-Shan Tai | 2015-05-05 |
| 9013848 | Active clamp protection circuit for power semiconductor device for high frequency switching | — | 2015-04-21 |
| 8980716 | Self aligned trench MOSFET with integrated diode | Anup Bhalla | 2015-03-17 |
| 8963240 | Shielded gate trench (SGT) mosfet devices and manufacturing processes | Anup Bhalla | 2015-02-24 |
| 8963233 | Power MOSFET device structure for high frequency applications | Anup Bhalla, Daniel Ng, Tiesheng Li | 2015-02-24 |
| 8956940 | Oxide terminated trench MOSFET with three or four masks | Anup Bhalla | 2015-02-17 |
| 8951867 | High density trench-based power MOSFETs with self-aligned active contacts and method for making such devices | Yeeheng Lee, Hong Chang, Jongoh Kim, Hamza Yilmaz, Madhur Bobde +2 more | 2015-02-10 |
| 8946816 | High frequency switching MOSFETs with low output capacitance using a depletable P-shield | Madhur Bobde, Hamza Yilmaz, Daniel Ng | 2015-02-03 |
| 8946942 | Robust semiconductor power devices with design to protect transistor cells with slower switching speed | Anup Bhalla | 2015-02-03 |
| 8933506 | Diode structures with controlled injection efficiency for fast switching | Madhur Bobde, Harsh Naik, Lingpeng Guan, Anup Bhalla | 2015-01-13 |
| 8907416 | Dual gate oxide trench MOSFET with channel stop trench | Sung-Shan Tai, Xiaobin Wang | 2014-12-09 |
| 8896131 | Cascode scheme for improved device switching behavior | Anup Bhalla, Jun Hu, Fei Wang | 2014-11-25 |
| 8829603 | Shielded gate trench MOSFET package | Yi Su, Daniel Ng, Daniel Calafut, Anup Bhalla | 2014-09-09 |
| 8828857 | Approach to integrate Schottky in MOSFET | Yi Su, Daniel Ng, Anup Bhalla | 2014-09-09 |
| 8809948 | Device structure and methods of making high density MOSFETs for load switch and DC-DC applications | Hamza Yilmaz, Madhur Bobde, Hong Chang, Yeeheng Lee, Daniel Calafut +2 more | 2014-08-19 |
| 8759908 | Two-dimensional shielded gate transistor device and method of manufacture | Anup Bhalla, Daniel Ng | 2014-06-24 |
| 8753935 | High frequency switching MOSFETs with low output capacitance using a depletable P-shield | Madhur Bobde, Hamza Yilmaz, Daniel Ng | 2014-06-17 |
| 8669613 | Semiconductor device die with integrated MOSFET and low forward voltage diode-connected enhancement mode JFET and method | Wei Wang | 2014-03-11 |
| 8643135 | Edge termination configurations for high voltage semiconductor power devices | Madhur Bobde, Anup Bhalla | 2014-02-04 |
| 8637926 | Oxide terminated trench MOSFET with three or four masks | Anup Bhalla | 2014-01-28 |
| 8597998 | Power MOS device fabrication | Anup Bhalla, Tiesheng Li | 2013-12-03 |
| 8580667 | Self aligned trench MOSFET with integrated diode | Anup Bhalla | 2013-11-12 |
| 8445370 | Trench junction barrier controlled Schottky | Anup Bhalla | 2013-05-21 |
| 8431470 | Approach to integrate Schottky in MOSFET | Yi Su, Daniel Ng, Anup Bhalla | 2013-04-30 |
| 8431989 | Shielded gate trench (SGT) MOSFET devices and manufacturing processes | Anup Bhalla | 2013-04-30 |