Issued Patents All Time
Showing 76–100 of 133 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8394702 | Method for making dual gate oxide trench MOSFET with channel stop using three or four masks process | Sung-Shan Tai, Xiaobin Wang | 2013-03-12 |
| 8372708 | Device structure and manufacturing method using HDP deposited using deposited source-body implant block | Anup Bhalla, Francois Hebert, Sung-Shan Tai | 2013-02-12 |
| 8367501 | Oxide terminated trench MOSFET with three or four masks | Anup Bhalla | 2013-02-05 |
| 8357973 | Inverted-trench grounded-source FET structure with trenched source body short electrode | Francois Hebert, Anup Bhalla | 2013-01-22 |
| 8324683 | Oxide terminated trench MOSFET with three or four masks | Anup Bhalla | 2012-12-04 |
| 8324711 | Precision high-frequency capacitor formed on semiconductor substrate | Haim Goldberger, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel | 2012-12-04 |
| 8288229 | Power MOS device fabrication | Anup Bhalla, Tiesheng Li | 2012-10-16 |
| 8174283 | Calibration technique for measuring gate resistance of power MOS gate device at wafer level | Anup Bhalla, Daniel Ng | 2012-05-08 |
| 8169062 | Integrated circuit package for semiconductior devices with improved electric resistance and inductance | Leeshawn Luo, Anup Bhalla, Yueh-Se Ho, Mike F. Chang | 2012-05-01 |
| 8163618 | Power MOSFET device structure for high frequency applications | Anup Bhalla, Daniel Ng, Tiesheng Li | 2012-04-24 |
| 8119482 | MOSFET using gate work function engineering for switching applications | Anup Bhalla | 2012-02-21 |
| 8067822 | Integrated circuit package for semiconductor devices with improved electric resistance and inductance | Leeshawn Luo, Anup Bhalla, Yueh-Se Ho, Mike F. Chang | 2011-11-29 |
| 8035159 | Device structure and manufacturing method using HDP deposited source-body implant block | Anup Bhalla, Francois Hebert, Sung-Shan Tai | 2011-10-11 |
| 8008716 | Inverted-trench grounded-source FET structure with trenched source body short electrode | Francois Hebert, Anup Bhalla | 2011-08-30 |
| 8004063 | Precision high-frequency capacitor formed on semiconductor substrate | Haim Goldberger, Jacek Korec, Y. Mohammed Kasem, Harianto Wong, Jack Van Den Heuvel | 2011-08-23 |
| 7960233 | MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification | Anup Bhalla | 2011-06-14 |
| 7936011 | Shielded gate trench (SGT) MOSFET devices and manufacturing processes | Anup Bhalla | 2011-05-03 |
| 7923774 | Power MOS device with conductive contact layer | Anup Bhalla, Tiesheng Li | 2011-04-12 |
| 7868381 | Structures of and methods of fabricating trench-gated MIS devices | Anup Bhalla, Domon Pitzer, Jacek Korec, Xiaorong Shi | 2011-01-11 |
| 7863675 | MOSFET using gate work function engineering for switching applications | Anup Bhalla | 2011-01-04 |
| 7800169 | Power MOS device | Anup Bhalla, Tiesheng Li | 2010-09-21 |
| 7786531 | MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification | Anup Bhalla | 2010-08-31 |
| 7764105 | MOSFET for synchronous rectification | Anup Bhalla | 2010-07-27 |
| 7755379 | Configurations and method for carrying out wafer level unclamped inductive switching (UIS) tests | Anup Bhalla | 2010-07-13 |
| 7745878 | Shielded gate trench (SGT) MOSFET cells implemented with a schottky source contact | Anup Bhalla | 2010-06-29 |