Issued Patents 2022
Showing 26–50 of 64 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11444177 | Semiconductor device and method | Wen-Kai Lin, Che-Hao Chang, Yung-Cheng Lu | 2022-09-13 |
| 11441221 | Method of performing atomic layer deposition | Po-Hsien Cheng, Chung-Ting Ko, Tsung-Hsun Yu, Tze-Liang Lee | 2022-09-13 |
| 11437240 | Transistor gate structure and method of forming | Hsin-Yi Lee, Cheng-Lung Hung | 2022-09-06 |
| 11437277 | Forming isolation regions for separating fins and gate stacks | Chung-Ting Ko, Tai-Chun Huang, Jr-Hung Li, Tze-Liang Lee | 2022-09-06 |
| 11437474 | Gate structures in transistors and method of forming same | Hsin-Yi Lee, Cheng-Lung Hung | 2022-09-06 |
| 11437491 | Non-conformal capping layer and method forming same | Ming-Ho Lin, Cheng-I Lin, Chun-Heng Chen | 2022-09-06 |
| 11437492 | Semiconductor device and method of manufacture | Wan-Yi Kao, Hung-Cheng Lin, Che-Hao Chang, Yung-Cheng Lu | 2022-09-06 |
| 11430865 | Semiconductor device and method | Shu-Han Chen, Tsung-Ju Chen, Chun-Heng Chen | 2022-08-30 |
| 11430698 | In-situ formation of metal gate modulators | Hsin-Han Tsai, Chung-Chiang Wu, Cheng-Lung Hung, Weng Chang | 2022-08-30 |
| 11417748 | Semiconductor device and method of fabricating a semiconductor device | Chung-Ting Ko, Bi-Fen Wu | 2022-08-16 |
| 11417739 | Contacts for semiconductor devices and methods of forming the same | Meng-Han Lin, Sai-Hooi Yeong | 2022-08-16 |
| 11411079 | Semiconductor device and method | Hsin-Yi Lee, Ji-Cheng Chen | 2022-08-09 |
| 11404323 | Formation of hybrid isolation regions through recess and re-deposition | Chung-Ting Ko | 2022-08-02 |
| 11404554 | Transistor gates and method of forming | Hsin-Yi Lee, Cheng-Lung Hung | 2022-08-02 |
| 11392036 | Photoresist and method | Liang-Yi Chang, Tai-Chun Huang | 2022-07-19 |
| 11387344 | Method of manufacturing a semiconductor device having a doped work-function layer | Chia-Ching Lee, Hung-Chin Chung, Chung-Chiang Wu, Hsuan-Yu Tung, Kuan-Chang Chiu +1 more | 2022-07-12 |
| 11362002 | Adjusting work function through adjusting deposition temperature | Hsin-Yi Lee, Ji-Cheng Chen, Cheng-Lung Hung, Weng Chang | 2022-06-14 |
| 11348917 | Semiconductor device with isolation structure | Chieh-Ping Wang, Tai-Chun Huang, Yung-Cheng Lu, Ting-Gang Chen | 2022-05-31 |
| 11342334 | Memory cell and method | Meng-Han Lin, Han-Jong Chia, Sai-Hooi Yeong, Yu-Ming Lin | 2022-05-24 |
| 11335603 | Multi-layered insulating film stack | Chieh-Ping Wang, Ting-Gang Chen, Bo-Cyuan Lu, Tai-Chun Huang | 2022-05-17 |
| 11335806 | Semiconductor device structure and method for forming the same | Sai-Hooi Yeong, Chien Ning Yao | 2022-05-17 |
| 11322505 | Ferroelectric random access memory devices and methods | Bo-Feng Young, Sai-Hooi Yeong | 2022-05-03 |
| 11316047 | Structure and formation method of semiconductor device with monoatomic etch stop layer | Chung-Ting Ko, Bo-Cyuan Lu, Jr-Hung Li | 2022-04-26 |
| 11316034 | Post-formation mends of dielectric features | Wan-Yi Kao, Hung-Cheng Lin, Che-Hao Chang, Yung-Cheng Lu | 2022-04-26 |
| 11309398 | Semiconductor device and manufacturing method for the semiconductor device | Chun-Yen Peng, Te-Yang Lai, Bo-Feng Young, Chih-Yu Chang, Sai-Hooi Yeong | 2022-04-19 |