Issued Patents 2022
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532746 | Multi-bit memory storage device and method of operating same | Meng-Han Lin, Chia-En Huang, Martin Liu, Sai-Hooi Yeong, Yih Wang | 2022-12-20 |
| 11532640 | Method for manufacturing a three-dimensional memory | Chung-Te Lin, Feng-Cheng Yang, Meng-Han Lin, Sheng-Chen Wang | 2022-12-20 |
| 11527553 | Three-dimensional memory device and method | Meng-Han Lin, Sheng-Chen Wang, Feng-Cheng Yang, Yu-Ming Lin, Chung-Te Lin | 2022-12-13 |
| 11515313 | Gated ferroelectric memory cells for memory cell array and methods of forming the same | Bo-Feng Young, Sai-Hooi Yeong, Sheng-Chen Wang, Yu-Ming Lin | 2022-11-29 |
| 11508753 | Embedded ferroelectric FinFET memory device | Bo-Feng Young, Chung-Te Lin, Sai-Hooi Yeong, Yu-Ming Lin, Sheng-Chih Lai +1 more | 2022-11-22 |
| 11508752 | Grid structure to reduce domain size in ferroelectric memory device | Sai-Hooi Yeong | 2022-11-22 |
| 11495618 | Three-dimensional memory device and method | Meng-Han Lin, Sheng-Chen Wang, Feng-Cheng Yang, Yu-Ming Lin, Chung-Te Lin | 2022-11-08 |
| 11488659 | Memory circuit and write method | Shih-Lien Linus Lu, Bo-Feng Young, Yu-Ming Lin, Sai-Hooi Yeong | 2022-11-01 |
| 11450362 | Memory device, integrated circuit device and method | Bo-Feng Young, Yu-Ming Lin, Shih-Lien Linus Lu, Sai-Hooi Yeong, Chia-En Huang +1 more | 2022-09-20 |
| 11450676 | Ferroelectric random access memory device with a three-dimensional ferroelectric capacitor | Bo-Feng Young, Sai-Hooi Yeong, Chi On Chui | 2022-09-20 |
| 11444069 | 3D semiconductor package including memory array | Bo-Feng Young, Sai-Hooi Yeong, Sheng-Chen Wang, Yu-Ming Lin | 2022-09-13 |
| 11424268 | Semiconductor structure and manufacturing method thereof | Yu-Ming Lin, Zhiqiang Wu, Sai-Hooi Yeong | 2022-08-23 |
| 11423966 | Memory array staircase structure | Meng-Han Lin, Sheng-Chen Wang, Feng-Cheng Yang, Yu-Ming Lin, Chung-Te Lin | 2022-08-23 |
| 11411011 | Semiconductor structure having memory device and method of forming the same | Chao-I Wu, Yu-Ming Lin | 2022-08-09 |
| 11404570 | Semiconductor devices with embedded ferroelectric field effect transistors | Chia-Hao Chang, Lin-Yu Huang, Bo-Feng Young, Yu-Ming Lin | 2022-08-02 |
| 11404569 | Sidewall spacer structure to increase switching performance of ferroelectric memory device | — | 2022-08-02 |
| 11404444 | Three-dimensional memory device and methods of forming | Chun-Chieh Lu, Sai-Hooi Yeong, Bo-Feng Young, Yu-Ming Lin | 2022-08-02 |
| 11404091 | Memory array word line routing | Meng-Han Lin, Chenchen Jacob Wang, Yi-Ching Liu, Sai-Hooi Yeong, Yu-Ming Lin +1 more | 2022-08-02 |
| 11362108 | Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the same | Bo-Feng Young, Sai-Hooi Yeong, Yu-Ming Lin, Chung-Te Lin | 2022-06-14 |
| 11355551 | Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the same | Bo-Feng Young, Sai-Hooi Yeong, Chenchen Jacob Wang, Meng-Han Lin, Yu-Ming Lin | 2022-06-07 |
| 11355516 | Three-dimensional memory device and method | Feng-Cheng Yang, Meng-Han Lin, Sheng-Chen Wang, Chung-Te Lin | 2022-06-07 |
| 11342334 | Memory cell and method | Meng-Han Lin, Sai-Hooi Yeong, Chi On Chui, Yu-Ming Lin | 2022-05-24 |
| 11342497 | Magnetic memory using spin-orbit torque | — | 2022-05-24 |
| 11217629 | Semiconductor device and manufacturing method thereof | Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin, Chenchen Jacob Wang | 2022-01-04 |