Issued Patents 2022
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532719 | Transistors on heterogeneous bonding layers | Kimin Jun, Jack T. Kavalieros, Gilbert Dewey, Willy Rachmady, Aaron D. Lilak +5 more | 2022-12-20 |
| 11532619 | Transistor structures including a non-planar body having variable and complementary semiconductor and insulator portions | Willy Rachmady, Gilbert Dewey, Jack T. Kavalieros, Caleb BARRETT, Jay P. Gupta +7 more | 2022-12-20 |
| 11508577 | Channel layer formation for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Gilbert Dewey, Matthew V. Metz, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo +4 more | 2022-11-22 |
| 11482621 | Vertically stacked CMOS with upfront M0 interconnect | Willy Rachmady, Patrick Morrow, Aaron D. Lilak, Rishabh Mehandru, Gilbert Dewey +4 more | 2022-10-25 |
| 11469323 | Ferroelectric gate stack for band-to-band tunneling reduction | Gilbert Dewey, Willy Rachmady, Jack T. Kavalieros, Matthew V. Metz, Sean T. Ma +2 more | 2022-10-11 |
| 11444159 | Field effect transistors with wide bandgap materials | Sean T. Ma, Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Harold W. Kennel +3 more | 2022-09-13 |
| 11437405 | Transistors stacked on front-end p-type transistors | Gilbert Dewey, Patrick Morrow, Aaron D. Lilak, Willy Rachmady, Anh Phan +4 more | 2022-09-06 |
| 11424335 | Group III-V semiconductor devices having dual workfunction gate electrodes | Sean T. Ma, Willy Rachmady, Gilbert Dewey, Dipanjan Basu | 2022-08-23 |
| 11404562 | Tunneling field effect transistors | Willy Rachmady, Matthew V. Metz, Ashish Agrawal, Benjamin Chu-Kung, Uygar E. Avci +2 more | 2022-08-02 |
| 11398479 | Heterogeneous Ge/III-V CMOS transistor structures | Willy Rachmady, Abhishek A. Sharma, Ravi Pillarisetty, Patrick Morrow, Rishabh Mehandru +2 more | 2022-07-26 |
| 11393818 | Stacked transistors with Si PMOS and high mobility thin film transistor NMOS | Gilbert Dewey, Ravi Pillarisetty, Abhishek A. Sharma, Aaron D. Lilak, Willy Rachmady +5 more | 2022-07-19 |
| 11387238 | Non-silicon N-Type and P-Type stacked transistors for integrated circuit devices | Gilbert Dewey, Patrick Morrow, Ravi Pillarisetty, Rishabh Mehandru, Willy Rachmady +1 more | 2022-07-12 |
| 11380684 | Stacked transistor architecture including nanowire or nanoribbon thin film transistors | Gilbert Dewey, Aaron D. Lilak, Jack T. Kavalieros, Willy Rachmady, Anh Phan +4 more | 2022-07-05 |
| 11367789 | Source/drain recess etch stop layers and bottom wide-gap cap for III-V MOSFETs | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Sean T. Ma +1 more | 2022-06-21 |
| 11367722 | Stacked nanowire transistor structure with different channel geometries for stress | Aaron D. Lilak, Stephen M. Cea, Gilbert Dewey, Willy Rachmady, Roza Kotlyar +4 more | 2022-06-21 |
| 11355621 | Non-planar semiconductor device including a replacement channel structure | Gilbert Dewey, Willy Rachmady, Sean T. Ma, Nicholas G. Minutillo, Tahir Ghani +2 more | 2022-06-07 |
| 11348916 | Leave-behind protective layer having secondary purpose | Aaron D. Lilak, Anh Phan, Ehren Mannebach, Stephanie A. Bojarski, Gilbert Dewey +2 more | 2022-05-31 |
| 11348919 | Gate-all-around integrated circuit structures having depopulated channel structures using selective bottom-up approach | Nicole K. Thomas, Ehren Mannebach, Marko Radosavljevic | 2022-05-31 |
| 11335793 | Vertical tunneling field-effect transistors | Jack T. Kavalieros, Ian A. Young, Matthew V. Metz, Willy Rachmady, Uygar E. Avci +2 more | 2022-05-17 |
| 11335796 | Source to channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Sean T. Ma, Jack T. Kavalieros | 2022-05-17 |
| 11328988 | Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication | Gilbert Dewey, Ryan Keech, Cory Bomberger, Ashish Agrawal, Willy Rachmady +1 more | 2022-05-10 |
| 11296203 | Switching device having gate stack with low oxide growth | Willy Rachmady, Gilbert Dewey | 2022-04-05 |
| 11276694 | Transistor structure with indium phosphide channel | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Nicholas G. Minutillo, Jack T. Kavalieros +2 more | 2022-03-15 |
| 11257904 | Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs) | Tahir Ghani, Jack T. Kavalieros, Anand S. Murthy, Harold W. Kennel, Gilbert Dewey +4 more | 2022-02-22 |
| 11244943 | Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material | Gilbert Dewey, Ashish Agrawal, Kimin Jun, Willy Rachmady, Zachary Geiger +5 more | 2022-02-08 |