Issued Patents 2019
Showing 1–25 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522416 | FinFET device having oxide region between vertical fin structures | Ying-Keung Leung | 2019-12-31 |
| 10522407 | FinFET channel on oxide structures and related methods | Ching-Wei Tsai, Ying-Keung Leung | 2019-12-31 |
| 10516051 | FinFET and method of fabrication thereof | Kuan-Ting Pan, Ching-Wei Tsai, Ying-Keung Leung, Chih-Hao Wang, Carlos H. Diaz | 2019-12-24 |
| 10516049 | Multi-gate device and method of fabrication thereof | Ching-Wei Tsai, Carlos H. Diaz, Chih-Hao Wang, Wai-Yi Lien, Ying-Keung Leung | 2019-12-24 |
| 10510873 | Semiconductor device and manufacturing method thereof | Shi Ning Ju, Kuan-Ting Pan, Kuan-Lun Cheng, Chih-Hao Wang | 2019-12-17 |
| 10510874 | Semiconductor device | Kuan-Lun Cheng, Chih-Hao Wang, Keng-Chu Lin, Shi Ning Ju | 2019-12-17 |
| 10497778 | Semiconductor device and manufacturing method thereof | Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang | 2019-12-03 |
| 10483378 | Epitaxial features confined by dielectric fins and spacers | Kuan-Lun Cheng, Chih-Hao Wang | 2019-11-19 |
| 10468528 | FinFET device with high-k metal gate stack | Ka-Hing Fung, Chih-Sheng Chang, Zhiqiang Wu | 2019-11-05 |
| 10461176 | FinFET device including a stem region of a fin element | Jean-Pierre Colinge, Zhiqiang Wu | 2019-10-29 |
| 10453961 | Structure and method for SRAM FinfET device | Ka-Hing Fung, Zhiqiang Wu, Carlos H. Diaz | 2019-10-22 |
| 10453842 | Tuning tensile strain on FinFET | Zhi-Chang Lin, Guan-Lin Chen, Ting-Hung Hsu, Jiun-Jia Huang | 2019-10-22 |
| 10431473 | FINFET with source/drain structure and method of fabrication thereof | Ching-Wei Tsai, Chih-Hao Wang, Ying-Keung Leung | 2019-10-01 |
| 10410930 | Nonplanar device and strain-generating channel dielectric | Ka-Hing Fung, Zhiqiang Wu | 2019-09-10 |
| 10403714 | Fill fins for semiconductor devices | Kuan-Lun Cheng, Chih-Hao Wang | 2019-09-03 |
| 10403545 | Power reduction in finFET structures | Chih-Hao Wang, Kuan-Lun Cheng | 2019-09-03 |
| 10361220 | Method of forming FinFET channel and structures thereof | Chih-Hao Wang, Ching-Wei Tsai, Jhon Jhy Liaw, Wai-Yi Lien | 2019-07-23 |
| 10361126 | System and method for widening fin widths for small pitch FinFET devices | Shi Ning Ju, Chih-Hao Wang, Ying-Keung Leung, Carlos H. Diaz | 2019-07-23 |
| 10361270 | Nanowire MOSFET with different silicides on source and drain | Jean-Pierre Colinge, Cheng-Tung Lin, Carlos H. Diaz | 2019-07-23 |
| 10361280 | Gate structure for semiconductor device | Chih-Hao Wang, Ching-Wei Tsai, Kuan-Lun Cheng | 2019-07-23 |
| 10355137 | FINFETs with wrap-around silicide and method forming the same | Ching-Wei Tsai, Chi-Wen Liu, Chih-Hao Wang, Ying-Keung Leung | 2019-07-16 |
| 10347751 | Self-aligned epitaxy layer | Chih-Hao Wang, Kuan-Lun Cheng | 2019-07-09 |
| 10340191 | Method of forming a fin structure of semiconductor device | Jiun-Jia Huang, Chao-Hsiung Wang, Chi-Wen Liu | 2019-07-02 |
| 10325816 | Structure and method for FinFET device | Ka-Hing Fung, Chih-Sheng Chang, Zhiqiang Wu | 2019-06-18 |
| 10325989 | Semiconductor device with silicide | Jean-Pierre Colinge, Ta-Pen Guo, Carlos H. Diaz | 2019-06-18 |