Issued Patents 2019
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10510744 | Vertical nanowire transistor for input/output structure | Ta-Pen Guo, Carlos H. Diaz | 2019-12-17 |
| 10497792 | Contacts for highly scaled transistors | Carlos H. Diaz, Chung-Cheng Wu, Chia-Hao Chang, Chih-Hao Wang, Chun-Hsiung Lin +2 more | 2019-12-03 |
| 10461190 | Method for reducing contact resistance in semiconductor structures | Carlos H. Diaz | 2019-10-29 |
| 10461179 | Devices having a semiconductor material that is semimetal in bulk and methods of forming the same | Carlos H. Diaz, Yee-Chia Yeo | 2019-10-29 |
| 10461176 | FinFET device including a stem region of a fin element | Kuo-Cheng Ching, Zhiqiang Wu | 2019-10-29 |
| 10453522 | SRAM with stacked bit cells | Carlos H. Diaz, Chih-Hao Wang, Ta-Pen Guo | 2019-10-22 |
| 10361270 | Nanowire MOSFET with different silicides on source and drain | Cheng-Tung Lin, Kuo-Cheng Ching, Carlos H. Diaz | 2019-07-23 |
| 10325989 | Semiconductor device with silicide | Kuo-Cheng Ching, Ta-Pen Guo, Carlos H. Diaz | 2019-06-18 |
| 10294101 | Semiconductor arrangement with one or more semiconductor columns | Ta-Pen Guo, Chih-Hao Wang, Carlos H. Diaz | 2019-05-21 |
| 10290737 | Semiconductor arrangement with one or more semiconductor columns | Kuo-Cheng Ching, Ta-Pen Guo, Carlos H. Diaz | 2019-05-14 |
| 10276664 | Semiconductor structures and methods for multi-dimension of nanowire diameter to improve drive current | Tsung-Hsing Yu, Chia-Wen Liu, Yeh Hsu | 2019-04-30 |
| 10269572 | Semiconductor device and manufacturing method thereof | Carlos H. Diaz | 2019-04-23 |
| 10193090 | Method of manufacturing a semiconductor device and a semiconductor device | Chun-Chieh Lu, Ken-Ichi Goto, Zhiqiang Wu, Yu-Ming Lin | 2019-01-29 |
| 10191694 | 3D cross-bar nonvolatile memory | Carlos H. Diaz, Ta-Pen Guo | 2019-01-29 |
| 10170404 | Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure | Ta-Pen Guo, Carlos H. Diaz, Yi-Hsiung Lin | 2019-01-01 |