Issued Patents 2019
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10424515 | Vertical FET devices with multiple channel lengths | Hari V. Mallela, Rajasekhar Venigalla | 2019-09-24 |
| 10418450 | Self aligned replacement metal source/drain finFET | Emre Alptekin, Robert R. Robison | 2019-09-17 |
| 10403628 | Finfet based ZRAM with convex channel region | Ravikumar Ramachandran | 2019-09-03 |
| 10381463 | Patterned sidewall smoothing using a pre-smoothed inverted tone pattern | Kafai Lai, Hari V. Mallela, Hiroyuki Miyazoe, Rajasekhar Venigalla | 2019-08-13 |
| 10340340 | Multiple-threshold nanosheet transistors | Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Nicolas Loubet, Robert R. Robison +1 more | 2019-07-02 |
| 10282646 | Tag with tunable retro-reflectors | Evan G. Colgan, Fuad E. Doany, Li-Wen Hung, Bucknell C. Webb | 2019-05-07 |
| 10283416 | Vertical FETS with variable bottom spacer recess | Hari V. Mallela, Rajasekhar Venigalla | 2019-05-07 |
| 10249739 | Nanosheet MOSFET with partial release and source/drain epitaxy | Michael A. Guillorn, Terence B. Hook, Nicolas Loubet, Robert R. Robison | 2019-04-02 |
| 10243041 | Vertical fin field effect transistor with air gap spacers | Hari V. Mallela, Robert R. Robison, Rajasekhar Venigalla | 2019-03-26 |
| 10242980 | Semiconductor fin isolation by a well trapping fin portion | Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Ravikumar Ramachandran, Huiling Shang | 2019-03-26 |
| 10236344 | Tunnel transistors with abrupt junctions | Emre Alptekin, Hung H. Tran, Xiaobin Yuan | 2019-03-19 |
| 10177154 | Structure and method to prevent EPI short between trenches in FinFET eDRAM | Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz +5 more | 2019-01-08 |
| 10170543 | Vertical fin field effect transistor with air gap spacers | Hari V. Mallela, Robert R. Robison, Rajasekhar Venigalla | 2019-01-01 |
| 10170485 | Three-dimensional stacked junctionless channels for dense SRAM | Michael A. Guillorn, Robert R. Robison, Rajasekhar Venigalla | 2019-01-01 |
| 10170477 | Forming MOSFET structures with work function modification | Ruqiang Bao, Gauri Karve, Derrick Liu, Robert R. Robison, Gen Tsutsui +1 more | 2019-01-01 |
| 10170584 | Nanosheet field effect transistors with partial inside spacers | Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Rajasekhar Venigalla | 2019-01-01 |
| 10168427 | Data readout via reflected ultrasound signals | Li-Wen Hung | 2019-01-01 |