Issued Patents 2019
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10381479 | Interface charge reduction for SiGe surface | Devendra K. Sadana, Dechao Guo, Joel P. de Souza, Ruqiang Bao, Stephen W. Bedell +3 more | 2019-08-13 |
| 10319811 | Semiconductor device including fin having condensed channel region | Hong He, Effendi Leobandung, Tenko Yamashita | 2019-06-11 |
| 10312245 | Laser spike annealing for solid phase epitaxy and low contact resistance in an SRAM with a shared pFET and nFET trench | Zuoguang Liu, Heng Wu, Peng Xu | 2019-06-04 |
| 10249758 | FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation | Dechao Guo, Hemanth Jagannathan, Shogo Mochizuki, Chun-Chen Yeh | 2019-04-02 |
| 10249542 | Self-aligned doping in source/drain regions for low contact resistance | Dechao Guo, Zuoguang Liu, Heng Wu | 2019-04-02 |
| 10204828 | Enabling low resistance gates and contacts integrated with bilayer dielectrics | Ruqiang Bao, Benjamin D. Briggs, Lawrence A. Clevenger, Koichi Motoyama, Cornelius Brown Peethala +1 more | 2019-02-12 |
| 10170477 | Forming MOSFET structures with work function modification | Ruqiang Bao, Gauri Karve, Derrick Liu, Robert R. Robison, Reinaldo Vega +1 more | 2019-01-01 |