| 10510892 |
Forming a sacrificial liner for dual channel devices |
Huiming Bu, Kangguo Cheng, Sivananda K. Kanakasabapathy, Peng Xu |
2019-12-17 |
| 10468412 |
Formation of a semiconductor device with selective nitride grown on conductor |
Ruqiang Bao, Zuoguang Liu |
2019-11-05 |
| 10381479 |
Interface charge reduction for SiGe surface |
Devendra K. Sadana, Joel P. de Souza, Ruqiang Bao, Stephen W. Bedell, Shogo Mochizuki +3 more |
2019-08-13 |
| 10361210 |
Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices |
Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh |
2019-07-23 |
| 10355106 |
Replacement metal gate scheme with self-alignment gate for vertical field effect transistors |
Raqiang Bao |
2019-07-16 |
| 10332883 |
Integrated metal gate CMOS devices |
Ruqiang Bao, Vijay Narayanan |
2019-06-25 |
| 10312370 |
Forming a sacrificial liner for dual channel devices |
Huiming Bu, Kangguo Cheng, Sivananda K. Kanakasabapathy, Peng Xu |
2019-06-04 |
| 10263098 |
Threshold voltage modulation through channel length adjustment |
Ruqiang Bao, Derrick Liu, Huimei Zhou |
2019-04-16 |
| 10256238 |
Preserving channel strain in fin cuts |
Andrew M. Greene, Ravikumar Ramachandran, Rajasekhar Venigalla |
2019-04-09 |
| 10256150 |
Fabricating Fin-based split-gate high-drain-voltage transistor by work function tuning |
Liyang Song, Xinhui Wang, Qintao Zhang |
2019-04-09 |
| 10249542 |
Self-aligned doping in source/drain regions for low contact resistance |
Zuoguang Liu, Gen Tsutsui, Heng Wu |
2019-04-02 |
| 10249758 |
FinFET with sigma recessed source/drain and un-doped buffer layer epitaxy for uniform junction formation |
Hemanth Jagannathan, Shogo Mochizuki, Gen Tsutsui, Chun-Chen Yeh |
2019-04-02 |
| 10249714 |
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction |
Shogo Mochizuki, Andreas Scholze, Chun-Chen Yeh |
2019-04-02 |
| 10224419 |
Threshold voltage modulation through channel length adjustment |
Ruqiang Bao, Derrick Liu, Huimei Zhou |
2019-03-05 |
| 10211207 |
Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices |
Praneet Adusumilli, Oleg Gluschenkov, Zuoguang Liu, Rajasekhar Venigalla, Tenko Yamashita |
2019-02-19 |
| 10170368 |
Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning |
Liyang Song, Xinhui Wang, Qintao Zhang |
2019-01-01 |
| 10170593 |
Threshold voltage modulation through channel length adjustment |
Ruqiang Bao, Derrick Liu, Huimei Zhou |
2019-01-01 |
