| 10109737 |
Method of forming high-germanium content silicon germanium alloy fins on insulator |
Pouya Hashemi, John A. Ott, Alexander Reznicek |
2018-10-23 |
| 10103242 |
Growing groups III-V lateral nanowire channels |
Sanghoon Lee, Effendi Leobandung, Brent A. Wacaser |
2018-10-16 |
| 10083986 |
CMOS with middle of line processing of III-V material on mandrel |
Cheng-Wei Cheng, Sanghoon Lee, Effendi Leobandung |
2018-09-25 |
| 10083987 |
CMOS with middle of line processing of III-V material on mandrel |
Cheng-Wei Cheng, Sanghoon Lee, Effendi Leobandung |
2018-09-25 |
| 10062693 |
Patterned gate dielectrics for III-V-based CMOS circuits |
Takashi Ando, Martin M. Frank, Vijay Narayanan, John Rozen |
2018-08-28 |
| 10062694 |
Patterned gate dielectrics for III-V-based CMOS circuits |
Takashi Ando, Martin M. Frank, Vijay Narayanan, John Rozen |
2018-08-28 |
| 10050144 |
Fabrication of a strained region on a substrate |
Isaac Lauer, Jiaxing Liu |
2018-08-14 |
| 10037989 |
III-V lateral bipolar integration with silicon |
Cheng-Wei Cheng, Sanghoon Lee, Effendi Leobandung |
2018-07-31 |
| 10032862 |
Semiconductor structure with integrated passive structures |
Anthony I. Chou, Arvind Kumar, Shreesh Narasimha |
2018-07-24 |
| 9988678 |
DNA sequencing detection field effect transistor |
Sanghoon Lee, Effendi Leobandung |
2018-06-05 |
| 9859397 |
Growing groups III-V lateral nanowire channels |
Sanghoon Lee, Effendi Leobandung, Brent A. Wacaser |
2018-01-02 |
