Issued Patents 2018
Showing 26–50 of 56 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10037885 | Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer | Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2018-07-31 |
| 10032676 | Vertical field effect transistor having U-shaped top spacer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-07-24 |
| 10020416 | Radiation sensor, method of forming the sensor and device including the sensor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-07-10 |
| 10020398 | Stress induction in 3D device channel using elastic relaxation of high stress material | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2018-07-10 |
| 10002803 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-06-19 |
| 10002809 | Top contact resistance measurement in vertical FETs | Kangguo Cheng, Zuoguang Liu, Wenyu Xu, Chen Zhang | 2018-06-19 |
| 9997618 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Ramachandra Divakaruni, Juntao Li | 2018-06-12 |
| 9997421 | Top contact resistance measurement in vertical FETS | Kangguo Cheng, Zuoguang Liu, Wenyu Xu, Chen Zhang | 2018-06-12 |
| 9997613 | Integrated etch stop for capped gate and method for manufacturing the same | Josephine B. Chang, Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2018-06-12 |
| 9997597 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-06-12 |
| 9991166 | Wimpy device by selective laser annealing | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2018-06-05 |
| 9985096 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Sanjay C. Mehta, Chun-Chen Yeh | 2018-05-29 |
| 9985021 | Shallow trench isolation recess process flow for vertical field effect transistor fabrication | Zhenxing Bi, Kangguo Cheng, Bruce Miao | 2018-05-29 |
| 9972700 | Vertical field effect transistors with bottom source/drain epitaxy | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-05-15 |
| 9966430 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-05-08 |
| 9960164 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-05-01 |
| 9935101 | Vertical field effect transistor with uniform gate length | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-04-03 |
| 9911592 | Method for making nanosheet CMOS device integrating atomic layer deposition process and replacement gate structure | Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2018-03-06 |
| 9911834 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Ramachandra Divakaruni, Juntao Li | 2018-03-06 |
| 9911656 | Wimpy device by selective laser annealing | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2018-03-06 |
| 9905663 | Fabrication of a vertical fin field effect transistor with a reduced contact resistance | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-02-27 |
| 9899524 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2018-02-20 |
| 9899515 | Fabrication of a pair of vertical fin field effect transistors having a merged top source/drain | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-02-20 |
| 9881842 | Wimpy and nominal semiconductor device structures for vertical finFETs | Kisup Chung, Su Chen Fan, Catherine B. Labelle | 2018-01-30 |
| 9876097 | Selectively formed gate sidewall spacer | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2018-01-23 |