Issued Patents 2018
Showing 51–65 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9923055 | Inner spacer for nanosheet transistors | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-03-20 |
| 9922883 | Method for making strained semiconductor device and related methods | Xiuyu Cai, Qing Liu, Ruilong Xie | 2018-03-20 |
| 9917162 | Fabrication of vertical field effect transistor structure with controlled gate length | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-03-13 |
| 9917195 | High doped III-V source/drain junctions for field effect transistors | Xiuyu Cai, Qing Liu, Kejia Wang, Ruilong Xie | 2018-03-13 |
| 9917152 | Nanosheet transistors on bulk material | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-03-13 |
| 9899525 | Increased contact area for finFETs | Veeraraghavan S. Basker, Chung-Hsun Lin, Zuoguang Liu, Tenko Yamashita | 2018-02-20 |
| 9899373 | Forming vertical transistors and metal-insulator-metal capacitors on the same chip | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-02-20 |
| 9892973 | Stress memorization technique for strain coupling enhancement in bulk finFET device | Kangguo Cheng, Juntao Li | 2018-02-13 |
| 9893171 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2018-02-13 |
| 9887196 | FinFET including tunable fin height and tunable fin width ratio | Xiuyu Cai, Qing Liu, Ruilong Xie | 2018-02-06 |
| 9870952 | Formation of VFET and finFET | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2018-01-16 |
| 9865508 | Method and structure to fabricate closely packed hybrid nanowires at scaled pitch | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2018-01-09 |
| 9859286 | Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices | Veeraraghavan S. Basker, Dechao Guo, Zuoguang Liu, Tenko Yamashita | 2018-01-02 |
| 9859423 | Hetero-channel FinFET | Qing Liu, Ruilong Xie, Xiuyu Cai | 2018-01-02 |
| 9859275 | Silicon nitride fill for PC gap regions to increase cell density | Dechao Guo, Zuoguang Liu, Tenko Yamashita | 2018-01-02 |