KW

Kejia Wang

Globalfoundries: 3 patents #130 of 961Top 15%
IBM: 3 patents #2,236 of 10,623Top 25%
SS Stmicroelectronics Sa: 3 patents #16 of 127Top 15%
Overall (2018): #68,101 of 503,207Top 15%
3
Patents 2018

Issued Patents 2018

Patent #TitleCo-InventorsDate
9935179 Method for making semiconductor device with filled gate line end recesses Xiuyu Cai, Qing Liu, Ruilong Xie, Chun-Chen Yeh 2018-04-03
9935201 High doped III-V source/drain junctions for field effect transistors Xiuyu Cai, Qing Liu, Ruilong Xie, Chun-Chen Yeh 2018-04-03
9917195 High doped III-V source/drain junctions for field effect transistors Xiuyu Cai, Qing Liu, Ruilong Xie, Chun-Chen Yeh 2018-03-13