Issued Patents 2017
Showing 1–25 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9852783 | Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages | Taehui Na, Byung Kyu Song, Seong-Ook Jung, Jung Pill Kim | 2017-12-26 |
| 9842638 | Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for process variations | Xia Li, Xiaochun Zhu | 2017-12-12 |
| 9824735 | System and method to generate a random number | Jimmy Jianan Kan, Chando Park, Peiyuan Wang | 2017-11-21 |
| 9813049 | Comparator including a magnetic tunnel junction (MTJ) device and a transistor | Jimmy Jianan Kan, Manu Rastogi, Kangho Lee | 2017-11-07 |
| 9799824 | STT-MRAM design enhanced by switching current induced magnetic field | William Xia, Wenqing Wu, Kendrick Hoy Leong Yuen, Abhishek Banerjee, Xia Li +1 more | 2017-10-24 |
| 9800271 | Error correction and decoding | Seong-Ook Jung, Sara Choi, Byung Kyu Song, Taehui Na, Jisu Kim +3 more | 2017-10-24 |
| 9753874 | Multi-step programming of heat-sensitive non-volatile memory (NVM) in processor-based systems | Adam E. Newham, Rashid Ahmed Akbar Attar, Jung Pill Kim, Sungryul Kim, Taehyun Kim | 2017-09-05 |
| 9728259 | Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin | Seong-Ook Jung, Byung Kyu Song, Taehui Na, Jung Pill Kim | 2017-08-08 |
| 9721634 | Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance | Xiaochun Zhu, Yu Lu, Chando Park | 2017-08-01 |
| 9704919 | High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells | Yu Lu, Wei-Chuan Chen, Jimmy Jianan Kan | 2017-07-11 |
| 9691462 | Latch offset cancelation for magnetoresistive random access memory | Seong-Ook Jung, Taehui Na, Byungkyu Song, Jung Pill Kim | 2017-06-27 |
| 9679663 | OTP cell with reversed MTJ connection | Jung Pill Kim, Taehyun Kim, Kangho Lee, Xia Li, Wah Nam Hsu | 2017-06-13 |
| 9672885 | MRAM word line power control scheme | Sungryul Kim, Jung Pill Kim, Taehyun Kim, Matthew Michael Nowak, Manoj Bhatnagar | 2017-06-06 |
| 9666792 | Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements | Wei-Chuan Chen, Yu Lu, Chando Park | 2017-05-30 |
| 9666259 | Dual mode sensing scheme | Seong-Ook Jung, Taehui Na, Byung Kyu Song, Jung Pill Kim | 2017-05-30 |
| 9647037 | Resistive random access memory device with resistance-based storage element and method of fabricating same | Yu Lu, Xia Li | 2017-05-09 |
| 9646670 | Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy | Kangho Lee, Jimmy Jianan Kan | 2017-05-09 |
| 9634237 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Matthias Georg Gottwald, Chando Park | 2017-04-25 |
| 9620706 | Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device | Kangho Lee, Chando Park, Jimmy Jianan Kan, Matthias Georg Gottwald, Xiaochun Zhu | 2017-04-11 |
| 9614147 | Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) | Chando Park, Kangho Lee | 2017-04-04 |
| 9614143 | De-integrated trench formation for advanced MRAM integration | Yu Lu, Wei-Chuan Chen | 2017-04-04 |
| 9601687 | Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction | Chando Park, Kangho Lee | 2017-03-21 |
| 9595666 | Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials | Matthias Georg Gottwald, Jimmy Jianan Kan, Kangho Lee, Chando Park | 2017-03-14 |
| 9595917 | Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizer | Jimmy Jianan Kan, Kangho Lee | 2017-03-14 |
| 9595662 | MRAM integration techniques for technology scaling | Xia Li, Yu Lu | 2017-03-14 |