Issued Patents 2017
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9842638 | Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for process variations | Xia Li, Seung H. Kang | 2017-12-12 |
| 9826781 | E-liquid flow control mechanism and electronic cigarette having the same | — | 2017-11-28 |
| 9801413 | Electronic cigarette | — | 2017-10-31 |
| 9795169 | Replaceable vaporizer assembly and electronic cigarette having the same | — | 2017-10-24 |
| 9795168 | Heating assemblies for E-cigarette vaporizers | — | 2017-10-24 |
| 9799989 | Rotating connector and electronic cigarettes having the rotating connector | — | 2017-10-24 |
| 9795170 | E-liquid separation mechanism and electronic cigarette having the same | — | 2017-10-24 |
| 9763477 | Ceramic heating elements for electronic cigarettes | — | 2017-09-19 |
| 9721634 | Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance | Yu Lu, Chando Park, Seung H. Kang | 2017-08-01 |
| 9693588 | Heating elements for electronic cigarettes | — | 2017-07-04 |
| 9634237 | Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices | Kangho Lee, Jimmy Jianan Kan, Matthias Georg Gottwald, Chando Park, Seung H. Kang | 2017-04-25 |
| 9622511 | Leakproof atomizer | — | 2017-04-18 |
| 9620706 | Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device | Kangho Lee, Chando Park, Jimmy Jianan Kan, Matthias Georg Gottwald, Seung H. Kang | 2017-04-11 |
| 9590010 | Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer | Matthias Georg Gottwald, Jimmy Jianan Kan, Chando Park, Seung H. Kang | 2017-03-07 |
| 9583696 | Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction | Matthias Georg Gottwald, Chando Park, Kangho Lee, Seung H. Kang | 2017-02-28 |
| 9548096 | Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods | Xia Li, Yu Lu | 2017-01-17 |
| 9543036 | System and method of programming a memory cell | Xia Li, Seung H. Kang | 2017-01-10 |