CP

Chando Park

QU Qualcomm: 13 patents #90 of 3,039Top 3%
Overall (2017): #4,300 of 506,227Top 1%
13
Patents 2017

Issued Patents 2017

Patent #TitleCo-InventorsDate
9824735 System and method to generate a random number Jimmy Jianan Kan, Peiyuan Wang, Seung H. Kang 2017-11-21
9728718 Magnetic tunnel junction (MTJ) device array Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee +1 more 2017-08-08
9721634 Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance Xiaochun Zhu, Yu Lu, Seung H. Kang 2017-08-01
9666792 Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements Wei-Chuan Chen, Yu Lu, Seung H. Kang 2017-05-30
9634237 Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Matthias Georg Gottwald, Seung H. Kang 2017-04-25
9620706 Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device Kangho Lee, Jimmy Jianan Kan, Matthias Georg Gottwald, Xiaochun Zhu, Seung H. Kang 2017-04-11
9614147 Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) Kangho Lee, Seung H. Kang 2017-04-04
9601687 Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction Kangho Lee, Seung H. Kang 2017-03-21
9595666 Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials Matthias Georg Gottwald, Jimmy Jianan Kan, Kangho Lee, Seung H. Kang 2017-03-14
9590010 Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer Matthias Georg Gottwald, Jimmy Jianan Kan, Xiaochun Zhu, Seung H. Kang 2017-03-07
9583696 Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction Matthias Georg Gottwald, Xiaochun Zhu, Kangho Lee, Seung H. Kang 2017-02-28
9570509 Magnetic tunnel junction (MTJ) device array Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee +1 more 2017-02-14
9548446 Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ) Matthias Georg Gottwald, Kangho Lee, Seung H. Kang 2017-01-17