| 9813049 |
Comparator including a magnetic tunnel junction (MTJ) device and a transistor |
Jimmy Jianan Kan, Manu Rastogi, Seung H. Kang |
2017-11-07 |
| 9799387 |
Integrated circuits with programmable memory cells and methods for programming the same |
Eng Huat Toh, Kiok Boone Elgin Quek |
2017-10-24 |
| 9736398 |
X-ray detecting method, photographing method using the X-ray detecting method, and X-ray detector using the methods |
Young Hwan Kim, Yongchul Kim, Jaechul Park |
2017-08-15 |
| 9728718 |
Magnetic tunnel junction (MTJ) device array |
Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Jimmy Jianan Kan, Yu Lu +1 more |
2017-08-08 |
| 9679663 |
OTP cell with reversed MTJ connection |
Jung Pill Kim, Taehyun Kim, Seung H. Kang, Xia Li, Wah Nam Hsu |
2017-06-13 |
| 9666640 |
High thermal budget magnetic memory |
Vinayak Bharat Naik, Taiebeh Tahmasebi, Chenchen Jacob Wang |
2017-05-30 |
| 9653137 |
STT-MRAM bitcell for embedded flash applications |
Eng Huat Toh, Jack T. Wong, Elgin Quek |
2017-05-16 |
| 9646670 |
Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy |
Jimmy Jianan Kan, Seung H. Kang |
2017-05-09 |
| 9634237 |
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices |
Jimmy Jianan Kan, Xiaochun Zhu, Matthias Georg Gottwald, Chando Park, Seung H. Kang |
2017-04-25 |
| 9620706 |
Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device |
Chando Park, Jimmy Jianan Kan, Matthias Georg Gottwald, Xiaochun Zhu, Seung H. Kang |
2017-04-11 |
| 9614147 |
Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) |
Chando Park, Seung H. Kang |
2017-04-04 |
| 9601687 |
Dual interface free layer with amorphous cap layer for perpendicular magnetic tunnel junction |
Chando Park, Seung H. Kang |
2017-03-21 |
| 9595917 |
Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizer |
Jimmy Jianan Kan, Seung H. Kang |
2017-03-14 |
| 9595666 |
Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials |
Matthias Georg Gottwald, Jimmy Jianan Kan, Chando Park, Seung H. Kang |
2017-03-14 |
| 9589619 |
Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy |
Jimmy Jianan Kan, Seung H. Kang |
2017-03-07 |
| 9583931 |
Busbar kit |
— |
2017-02-28 |
| 9583696 |
Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction |
Matthias Georg Gottwald, Chando Park, Xiaochun Zhu, Seung H. Kang |
2017-02-28 |
| 9570509 |
Magnetic tunnel junction (MTJ) device array |
Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Jimmy Jianan Kan, Yu Lu +1 more |
2017-02-14 |
| 9548445 |
Amorphous alloy space for perpendicular MTJs |
Wei-Chuan Chen, Seung H. Kang |
2017-01-17 |
| 9548446 |
Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ) |
Chando Park, Matthias Georg Gottwald, Seung H. Kang |
2017-01-17 |
| 9547092 |
Apparatus and method of detecting X-ray, and X-ray imaging system |
Young Hwan Kim, Jaechul Park |
2017-01-17 |
