| 9842638 |
Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for process variations |
Xiaochun Zhu, Seung H. Kang |
2017-12-12 |
| 9842802 |
Integrated circuit device featuring an antifuse and method of making same |
Zhongze Wang, John Jianhong Zhu |
2017-12-12 |
| 9799824 |
STT-MRAM design enhanced by switching current induced magnetic field |
William Xia, Wenqing Wu, Kendrick Hoy Leong Yuen, Abhishek Banerjee, Seung H. Kang +1 more |
2017-10-24 |
| 9679663 |
OTP cell with reversed MTJ connection |
Jung Pill Kim, Taehyun Kim, Kangho Lee, Seung H. Kang, Wah Nam Hsu |
2017-06-13 |
| 9647037 |
Resistive random access memory device with resistance-based storage element and method of fabricating same |
Yu Lu, Seung H. Kang |
2017-05-09 |
| 9622087 |
Spectrum resource sharing method, and base station |
Ning Hu, Xiaoyan Shi, Han Zhang, Xiaofeng Ren, Liwen Zhang +2 more |
2017-04-11 |
| 9620612 |
Intergrated circuit devices including an interfacial dipole layer |
Jeffrey Junhao Xu |
2017-04-11 |
| 9601617 |
Fabrication of a transistor including a tunneling layer |
Jun Yuan, Bin Yang |
2017-03-21 |
| 9601607 |
Dual mode transistor |
Daeik Daniel Kim, Bin Yang, Jonghae Kim, Daniel Wayne Perry |
2017-03-21 |
| D781270 |
Electronic device having antenna |
Mitul Dalal, Sanjay Gupta, Gilbert Lee Huppert |
2017-03-14 |
| 9595662 |
MRAM integration techniques for technology scaling |
Yu Lu, Seung H. Kang |
2017-03-14 |
| 9576801 |
High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory |
Jeffrey Junhao Xu, Zhongze Wang, Bin Yang, Xiaonan Chen, Yu Lu |
2017-02-21 |
| 9548333 |
MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitance |
Yu Lu, Seung H. Kang |
2017-01-17 |
| 9548096 |
Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods |
Yu Lu, Xiaochun Zhu |
2017-01-17 |
| 9543036 |
System and method of programming a memory cell |
Seung H. Kang, Xiaochun Zhu |
2017-01-10 |
