Issued Patents 2017
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9728718 | Magnetic tunnel junction (MTJ) device array | Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee +1 more | 2017-08-08 |
| 9721634 | Decoupling of source line layout from access transistor contact placement in a magnetic tunnel junction (MTJ) memory bit cell to facilitate reduced contact resistance | Xiaochun Zhu, Chando Park, Seung H. Kang | 2017-08-01 |
| 9704919 | High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells | Wei-Chuan Chen, Jimmy Jianan Kan, Seung H. Kang | 2017-07-11 |
| 9666792 | Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements | Wei-Chuan Chen, Chando Park, Seung H. Kang | 2017-05-30 |
| 9647037 | Resistive random access memory device with resistance-based storage element and method of fabricating same | Xia Li, Seung H. Kang | 2017-05-09 |
| 9614143 | De-integrated trench formation for advanced MRAM integration | Wei-Chuan Chen, Seung H. Kang | 2017-04-04 |
| 9595662 | MRAM integration techniques for technology scaling | Xia Li, Seung H. Kang | 2017-03-14 |
| 9576801 | High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory | Xia Li, Jeffrey Junhao Xu, Zhongze Wang, Bin Yang, Xiaonan Chen | 2017-02-21 |
| 9570509 | Magnetic tunnel junction (MTJ) device array | Vladimir Machkaoutsan, Matthias Georg Gottwald, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee +1 more | 2017-02-14 |
| 9548096 | Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods | Xia Li, Xiaochun Zhu | 2017-01-17 |
| 9548333 | MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitance | Xia Li, Seung H. Kang | 2017-01-17 |