| 9824936 |
Adjacent device isolation |
Vladimir Machkaoutsan, Mustafa Badaroglu, Stanley Seungchul Song, Choh Fei Yeap |
2017-11-21 |
| 9806177 |
FinFETs and methods for forming the same |
— |
2017-10-31 |
| 9799560 |
Self-aligned structure |
Stanley Seungchul Song, Kern Rim, Da Yang, John Jianhong Zhu, Junjing Bao +4 more |
2017-10-24 |
| 9793164 |
Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices |
Vladimir Machkaoutsan, Stanley Seungchul Song, John Jianhong Zhu, Junjing Bao, Mustafa Badaroglu +2 more |
2017-10-17 |
| 9721891 |
Integrated circuit devices and methods |
Junjing Bao, John Jianhong Zhu, Stanley Seungchul Song, Niladri Narayan Mojumder, Choh Fei Yeap |
2017-08-01 |
| 9653399 |
Middle-of-line integration methods and semiconductor devices |
John Jianhong Zhu, Da Yang, Stanley Seungchul Song, Kern Rim |
2017-05-16 |
| 9620612 |
Intergrated circuit devices including an interfacial dipole layer |
Xia Li |
2017-04-11 |
| 9620454 |
Middle-of-line (MOL) manufactured integrated circuits (ICs) employing local interconnects of metal lines using an elongated via, and related methods |
John Jianhong Zhu, Kern Rim, Stanley Seungchul Song, Da Yang |
2017-04-11 |
| 9576801 |
High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory |
Xia Li, Zhongze Wang, Bin Yang, Xiaonan Chen, Yu Lu |
2017-02-21 |
| 9564518 |
Method and apparatus for source-drain junction formation in a FinFET with in-situ doping |
Vladimir Machkaoutsan, Stanley Seungchul Song, Mustafa Badaroglu, Choh Fei Yeap |
2017-02-07 |
| 9543248 |
Integrated circuit devices and methods |
Junjing Bao, John Jianhong Zhu, Stanley Seungchul Song, Niladri Narayan Mojumder, Choh Fei Yeap |
2017-01-10 |
| 9536973 |
Metal-oxide-semiconductor field-effect transistor with metal-insulator-semiconductor contact structure to reduce schottky barrier |
— |
2017-01-03 |
