| 9812188 |
Static random-access memory (SRAM) sensor for bias temperature instability |
Zhongze Wang, Xiaonan Chen, Stanley Seungchul Song, Choh Fei Yeap |
2017-11-07 |
| 9806083 |
Static random access memory (SRAM) bit cells with wordlines on separate metal layers for increased performance, and related methods |
Stanley Seungchul Song, Zhongze Wang, Kern Rim, Choh Fei Yeap |
2017-10-31 |
| 9799560 |
Self-aligned structure |
Stanley Seungchul Song, Jeffrey Junhao Xu, Kern Rim, Da Yang, John Jianhong Zhu +4 more |
2017-10-24 |
| 9786356 |
Memory device with adaptive voltage scaling based on error information |
Zhongze Wang, Jonathan Liu, Choh Fei Yeap |
2017-10-10 |
| 9721891 |
Integrated circuit devices and methods |
Jeffrey Junhao Xu, Junjing Bao, John Jianhong Zhu, Stanley Seungchul Song, Choh Fei Yeap |
2017-08-01 |
| 9666481 |
Reduced height M1 metal lines for local on-chip routing |
Stanley Seungchul Song, Choh Fei Yeap, Zhongze Wang, Mustafa Badaroglu |
2017-05-30 |
| 9660649 |
Voltage scaling for holistic energy management |
Stanley Seungchul Song, Kern Rim, Choh Fei Yeap |
2017-05-23 |
| 9543248 |
Integrated circuit devices and methods |
Jeffrey Junhao Xu, Junjing Bao, John Jianhong Zhu, Stanley Seungchul Song, Choh Fei Yeap |
2017-01-10 |
| 9542518 |
User experience based management technique for mobile system-on-chips |
Stanley Seungchul Song, Kern Rim, Choh Fei Yeap |
2017-01-10 |
| 9536596 |
Three-port bit cell having increased width |
Stanley Seungchul Song, Zhongze Wang, Choh Fei Yeap |
2017-01-03 |