MG

Matthias Georg Gottwald

QU Qualcomm: 8 patents #184 of 3,039Top 7%
📍 Ridgefield, CT: #5 of 64 inventorsTop 8%
🗺 Connecticut: #82 of 3,711 inventorsTop 3%
Overall (2017): #11,236 of 506,227Top 3%
8
Patents 2017

Issued Patents 2017

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDate
9728718 Magnetic tunnel junction (MTJ) device array Vladimir Machkaoutsan, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee, Yu Lu +1 more 2017-08-08
9634237 Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices Kangho Lee, Jimmy Jianan Kan, Xiaochun Zhu, Chando Park, Seung H. Kang 2017-04-25
9620706 Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device Kangho Lee, Chando Park, Jimmy Jianan Kan, Xiaochun Zhu, Seung H. Kang 2017-04-11
9595666 Method of fabricating smooth seed layers with uniform crystalline texture for high perpendicular magnetic anisotropy materials Jimmy Jianan Kan, Kangho Lee, Chando Park, Seung H. Kang 2017-03-14
9590010 Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer Jimmy Jianan Kan, Chando Park, Xiaochun Zhu, Seung H. Kang 2017-03-07
9583696 Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction Chando Park, Xiaochun Zhu, Kangho Lee, Seung H. Kang 2017-02-28
9570509 Magnetic tunnel junction (MTJ) device array Vladimir Machkaoutsan, Mustafa Badaroglu, Jimmy Jianan Kan, Kangho Lee, Yu Lu +1 more 2017-02-14
9548446 Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ) Chando Park, Kangho Lee, Seung H. Kang 2017-01-17