Issued Patents 2017
Showing 26–32 of 32 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9589619 | Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy | Kangho Lee, Jimmy Jianan Kan | 2017-03-07 |
| 9590010 | Perpendicular magnetic tunnel junction (pMTJ) devices employing a thin pinned layer stack and providing a transitioning start to a body-centered cubic (BCC) crystalline / amorphous structure below an upper anti-parallel (AP) layer | Matthias Georg Gottwald, Jimmy Jianan Kan, Chando Park, Xiaochun Zhu | 2017-03-07 |
| 9583696 | Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction | Matthias Georg Gottwald, Chando Park, Xiaochun Zhu, Kangho Lee | 2017-02-28 |
| 9548333 | MRAM integration with low-K inter-metal dielectric for reduced parasitic capacitance | Yu Lu, Xia Li | 2017-01-17 |
| 9548446 | Synthetic antiferromagnet (SAF) coupled free layer for perpendicular magnetic tunnel junction (P-MTJ) | Chando Park, Matthias Georg Gottwald, Kangho Lee | 2017-01-17 |
| 9548445 | Amorphous alloy space for perpendicular MTJs | Kangho Lee, Wei-Chuan Chen | 2017-01-17 |
| 9543036 | System and method of programming a memory cell | Xia Li, Xiaochun Zhu | 2017-01-10 |