Issued Patents 2017
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9852783 | Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages | Taehui Na, Byung Kyu Song, Jung Pill Kim, Seung H. Kang | 2017-12-26 |
| 9800271 | Error correction and decoding | Sara Choi, Byung Kyu Song, Taehui Na, Jisu Kim, Jung Pill Kim +3 more | 2017-10-24 |
| 9728259 | Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin | Byung Kyu Song, Taehui Na, Jung Pill Kim, Seung H. Kang | 2017-08-08 |
| 9691462 | Latch offset cancelation for magnetoresistive random access memory | Taehui Na, Byungkyu Song, Jung Pill Kim, Seung H. Kang | 2017-06-27 |
| 9666259 | Dual mode sensing scheme | Taehui Na, Byung Kyu Song, Jung Pill Kim, Seung H. Kang | 2017-05-30 |
| 9583178 | SRAM read preferred bit cell with write assist circuit | Younghwi Yang, Bin Yang, Choh Fei Yeap | 2017-02-28 |
| 9574948 | Temperature sensor and temperature sensing method | Kyungho Ryu, Dong Hun Jung, Young Jae An | 2017-02-21 |