| 9852951 |
Minimizing shorting between FinFET epitaxial regions |
Kangguo Cheng, Balasubramanian Pranatharthiharan, Alexander Reznicek |
2017-12-26 |
| 9799654 |
FET trench dipole formation |
Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo |
2017-10-24 |
| 9799730 |
FINFETs with high quality source/drain structures |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2017-10-24 |
| 9773905 |
Strained FinFET by epitaxial stressor independent of gate pitch |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2017-09-26 |
| 9768173 |
Semiconductor structure containing low-resistance source and drain contacts |
Injo Ok, Balasubramanian Pranatharthiharan |
2017-09-19 |
| 9728626 |
Almost defect-free active channel region |
Dominic J. Schepis, Kangguo Cheng, Alexander Reznicek |
2017-08-08 |
| 9704753 |
Minimizing shorting between FinFET epitaxial regions |
Kangguo Cheng, Balasubramanian Pranatharthiharan, Alexander Reznicek |
2017-07-11 |
| 9704760 |
Integrated circuit (IC) with offset gate sidewall contacts and method of manufacture |
Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo |
2017-07-11 |
| 9685434 |
Inter-level dielectric layer in replacement metal gates and resistor fabrication |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2017-06-20 |
| 9685340 |
Stable contact on one-sided gate tie-down structure |
Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo |
2017-06-20 |
| 9673101 |
Minimize middle-of-line contact line shorts |
Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo |
2017-06-06 |
| 9647113 |
Strained FinFET by epitaxial stressor independent of gate pitch |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2017-05-09 |
| 9627322 |
Semiconductor device having reduced contact resistance |
Injo Ok, Balasubramanian Pranatharthiharan |
2017-04-18 |
| 9607898 |
Simultaneously fabricating a high voltage transistor and a finFET |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2017-03-28 |
| 9601482 |
Economical and environmentally friendly chemical mechanical polishing for III-V compound semiconductor device fabrication |
Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana |
2017-03-21 |
| 9595592 |
Forming dual contact silicide using metal multi-layer and ion beam mixing |
Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo |
2017-03-14 |
| 9589827 |
Shallow trench isolation regions made from crystalline oxides |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2017-03-07 |
| 9564370 |
Effective device formation for advanced technology nodes with aggressive fin-pitch scaling |
Injo Ok, Sanjay C. Mehta, Balasubramanian Pranatharthiharan, Soon-Cheon Seo |
2017-02-07 |
