AS

Andreas Scholze

Globalfoundries: 4 patents #123 of 1,311Top 10%
RE Renesas Electronics: 2 patents #107 of 915Top 15%
IBM: 2 patents #3,254 of 10,852Top 30%
📍 Colchester, VT: #4 of 58 inventorsTop 7%
🗺 Vermont: #31 of 583 inventorsTop 6%
Overall (2017): #23,211 of 506,227Top 5%
6
Patents 2017

Issued Patents 2017

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
9793272 Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage Dechao Guo, Shogo Mochizuki, Chun-Chen Yeh 2017-10-17
9786661 Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction Dechao Guo, Shogo Mochizuki, Chun-Chen Yeh 2017-10-10
9786765 FINFET having notched fins and method of forming same Edward J. Nowak, Brent A. Anderson 2017-10-10
9704852 Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode Robert J. Gauthier, Jr., Tom C. Lee, You Li, Rahul Mishra, Souvick Mitra 2017-07-11
9601513 Subsurface wires of integrated chip and methods of forming Terence B. Hook, Lars Liebmann, Roger QUON, Andrew H. Simon 2017-03-21
9536882 Field-isolated bulk FinFET Brent A. Anderson, Edward J. Nowak, Robert R. Robison 2017-01-03