LC

Liang-Yuh Chen

Applied Materials: 5 patents #56 of 884Top 7%
📍 Beijing, CA: #5 of 116 inventorsTop 5%
Overall (2003): #5,873 of 273,478Top 3%
6
Patents 2003

Issued Patents 2003

Showing 1–6 of 6 patents

Patent #TitleCo-InventorsDate
6627542 Continuous, non-agglomerated adhesion of a seed layer to a barrier layer Srinivas Gandikota, Rong Tao, Seshadri Ramaswami 2003-09-30
6620670 Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 Kevin Song, Jallepally Ravi, Shih-Hung Li 2003-09-16
6605531 Hole-filling technique using CVD aluminum and PVD aluminum integration Ted Guo, Wei Shi 2003-08-12
6537905 Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug Ted Guo, Roderick Craig Mosley, Fusen Chen 2003-03-25
6518176 Method of selective formation of a barrier layer for a contact level via Ted Guo, Suchitra Subrahmanyan, Roderick C. Mosely 2003-02-11
6509274 Method for forming aluminum lines over aluminum-filled vias in a semiconductor substrate Ted Guo, Jing-Pei (Connie) Chou, Roderick C. Mosely 2003-01-21