Issued Patents 1997
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5693566 | Layered low dielectric constant technology | — | 1997-12-02 |
| 5691573 | Composite insulation with a dielectric constant of less than 3 in a narrow space separating conductive lines | Steven C. Avanzino, Darrell M. Erb, Rich Klein | 1997-11-25 |
| 5688717 | Construction that prevents the undercut of interconnect lines in plasma metal etch systems | Lewis Shen, Sheshadri Ramaswami, Mark S. Chang | 1997-11-18 |
| 5679608 | Processing techniques for achieving production-worthy, low dielectric, low dielectric, low interconnect resistance and high performance IC | Mark S. Chang | 1997-10-21 |
| 5674781 | Landing pad technology doubled up as a local interconnect and borderless contact for deep sub-half micrometer IC application | Richard J. Huang, Rajat Rakkhit, Raymond T. Lee | 1997-10-07 |
| 5675186 | Construction that prevents the undercut of interconnect lines in plasma metal etch systems | Lewis Shen, Sheshadri Ramaswami, Mark S. Chang | 1997-10-07 |
| 5670828 | Tunneling technology for reducing intra-conductive layer capacitance | Simon S. Chan, Richard J. Huang | 1997-09-23 |
| 5665641 | Method to prevent formation of defects during multilayer interconnect processing | Lewis Shen | 1997-09-09 |
| 5654589 | Landing pad technology doubled up as local interconnect and borderless contact for deep sub-half micrometer IC application | Richard J. Huang, Rajat Rakkhit, Raymond T. Lee | 1997-08-05 |
| 5646448 | Copper pellet for reducing electromigration effects associated with a conductive via in a semiconductor device | Richard K. Klein, Darrell M. Erb, Steven C. Avanzino, Scott Luning, Bryan Tracy +2 more | 1997-07-08 |
| 5639691 | Copper pellet for reducing electromigration effects associated with a conductive via in a semiconductor device | Richard K. Klein, Darrell M. Erb, Steven C. Avanzino, Scott Luning, Bryan Tracy +2 more | 1997-06-17 |
| 5635423 | Simplified dual damascene process for multi-level metallization and interconnection structure | Richard J. Huang, Angela T. Hui, Mark S. Chang, Ming-Ren Lin | 1997-06-03 |
| 5625231 | Low cost solution to high aspect ratio contact/via adhesion layer application for deep sub-half micrometer back-end-of line technology | Richard J. Huang | 1997-04-29 |