KI

Koji Izunome

TC Toshiba Ceramics Co.: 8 patents #9 of 458Top 2%
CM Covalent Materials: 5 patents #5 of 81Top 7%
RJ Research Development Corporation Of Japan: 4 patents #27 of 402Top 7%
GC Globalwafers Japan Co.: 4 patents #5 of 44Top 15%
SS Sumitomo Sitix: 3 patents #7 of 57Top 15%
MM Mitsubishi Materials: 3 patents #352 of 1,543Top 25%
SM Shibaura Mechatronics: 3 patents #49 of 175Top 30%
NS Nippon Steel: 3 patents #914 of 4,423Top 25%
KC Komatsu Electronic Metals Co.: 3 patents #33 of 160Top 25%
UN Unknown: 2 patents #12,644 of 83,584Top 20%
TU Tohoku University: 2 patents #330 of 1,680Top 20%
Overall (All Time): #247,393 of 4,157,543Top 6%
18
Patents All Time

Issued Patents All Time

Showing 1–18 of 18 patents

Patent #TitleCo-InventorsDate
12371813 Silicon wafer and method for producing silicon wafer Haruo Sudo, Takashi Ishikawa, Hisashi Matsumura, Tatsuhiko Aoki, Shoji Ikeda +2 more 2025-07-29
11887845 Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate Kazutaka KAMIJO, Etsuo Fukuda, Takashi Ishikawa, Moriya Miyashita, Takao Sakamoto +1 more 2024-01-30
8999864 Silicon wafer and method for heat-treating silicon wafer Takeshi Senda, Hiromichi Isogai, Eiji Toyoda, Koji Araki, Tatsuhiko Aoki +4 more 2015-04-07
8476149 Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process Hiromichi Isogai, Takeshi Senda, Eiji Toyoda, Kumiko Murayama, Susumu Maeda +7 more 2013-07-02
8399341 Method for heat treating a silicon wafer Takeshi Senda, Hiromichi Isogai, Eiji Toyoda, Kumiko Murayama, Koji Araki +4 more 2013-03-19
8252700 Method of heat treating silicon wafer Takeshi Senda, Hiromichi Isogai, Eiji Toyoda, Kumiko Murayama, Koji Araki +4 more 2012-08-28
7977219 Manufacturing method for silicon wafer Hiromichi Isogai, Takeshi Senda, Eiji Toyoda, Kumiko Murayama, Susumu Maeda +1 more 2011-07-12
7679730 Surface inspection apparatus and surface inspection method for strained silicon wafer Hideaki Takano, Miyuki Shimizu, Takeshi Senda, Yoshinori Hayashi, Kazuhiko Hamatani 2010-03-16
7403278 Surface inspection apparatus and surface inspection method Yoshinori Hayashi, Hiroyuki Naraidate, Makoto Kyoya, Hiromi Nagahama, Miyuki Shimizu +1 more 2008-07-22
7250357 Manufacturing method for strained silicon wafer Takeshi Senda 2007-07-31
7247583 Manufacturing method for strained silicon wafer Hisatsugu Kurita, Masato Igarashi, Takeshi Senda 2007-07-24
7193294 Semiconductor substrate comprising a support substrate which comprises a gettering site Reiko Yoshimura, Tsukasa Tada, Kazuhiko Kashima 2007-03-20
7149341 Wafer inspection apparatus Yoshinori Hayashi, Hiroyuki Naraidate, Hiroaki Yuda, Atsushi Tanabe, Hiromichi Isogai 2006-12-12
7060597 Manufacturing method for a silicon substrate having strained layer Hisatsugu Kurita, Masato Igarashi, Takeshi Senda 2006-06-13
5704974 Growth of silicon crystal from melt having extraordinary eddy flows on its surface Souroku Kawanishi, Shinji Togawa, Atsushi Ikari, Hitoshi Sasaki, Shigeyuki Kimura 1998-01-06
5700320 Growth of silicon single crystal having uniform impurity distribution along lengthwise or radial direction Souroku Kawanishi, Shinji Togawa, Atsushi Ikari, Hitoshi Sasaki, Shigeyuki Kimura 1997-12-23
5683504 Growth of silicon single crystal Souroku Kawanishi, Shinji Togawa, Atsushi Ikari, Hitoshi Sasaki, Shigeyuki Kimura 1997-11-04
5477805 Preparation of silicon melt for use in pull method of manufacturing single crystal Xin ming Huang, Kazutaka Terashima, Shigeyuki Kimura 1995-12-26