Issued Patents All Time
Showing 25 most recent of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9755111 | Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD) | Suzuka Nishimura, Muneyuki Hirai | 2017-09-05 |
| 9595632 | Method for producing GaN-based crystal and semiconductor device | Suzuka Nishimura, Muneyuki Hirai | 2017-03-14 |
| 7875118 | Crystallization method and crystallization apparatus | Yasunao Oyama | 2011-01-25 |
| 7696690 | Short-wavelength light-emitting element arranged in a container with a window having a window board formed of a calcium fluoride crystals | Suzuka Nishimura | 2010-04-13 |
| 6936490 | Semiconductor wafer and its manufacturing method | Yoshihisa Abe, Shunichi Suzuki, Hideo Nakanishi, Jun Komiyama | 2005-08-30 |
| 6828169 | Method of forming group-III nitride semiconductor layer on a light-emitting device | Mu-Jen Lai, Chiung-Yu Chang | 2004-12-07 |
| 6194744 | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer | Takashi Udagawa, Suzuka Nishimura, Takuji Tsuzaki | 2001-02-27 |
| 6096128 | Silicon crystal, and device and method for manufacturing same | Hideo Nakanishi, Susumu Maeda, Keisei Abe | 2000-08-01 |
| 6069021 | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer | Suzuka Nishimura, Takuji Tsuzaki, Takashi Udagawa | 2000-05-30 |
| 6019837 | Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal | Susumu Maeda, Keisei Abe, Hideo Nakanishi | 2000-02-01 |
| 6004393 | Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal | Susumu Maeda, Keisei Abe, Hideo Nakanishi | 1999-12-21 |
| 5524574 | Control of oxygen concentration in single crystal pulled up from melt containing Group-V element | Xingming HUANG, Kouji Izunome, Yutaka Shiraishi, Hitoshi Sasaki, Shigeyuki Kimura | 1996-06-11 |
| 5477805 | Preparation of silicon melt for use in pull method of manufacturing single crystal | Koji Izunome, Xin ming Huang, Shigeyuki Kimura | 1995-12-26 |
| 5476064 | Pull method for growth of single crystal using density detector and apparatus therefor | Hitoshi Sasaki, Eiji Tokizaki, Akira Nagashima, Shigeyuki Kimura | 1995-12-19 |
| 5450814 | Single crystal pulling apparatus having slidable shield plate to control area of opening around single crystal | Yutaka Shiraishi | 1995-09-19 |
| 5410914 | Measuring device for density of liquid or high-temperature melt without influence of surface tension | Hitoshi Sasaki, Eiji Tokizaki | 1995-05-02 |
| 5377291 | Wavelength converting optical device | Genichi Hatakoshi, Masaki Okajima, Yutaka Uematsu | 1994-12-27 |
| 5162297 | Liquid phase epitaxial growth of high temperature superconducting oxide wafer | Katsuyoshi Fukuda | 1992-11-10 |
| 5113469 | Optical wavelength-converting device for guided-wave second-harmonic generation in Cerenkov radiation mode | Genichi Hatakoshi, Masaru Kawachi, Yutaka Uematsu | 1992-05-12 |
| 5030315 | Methods of manufacturing compound semiconductor crystals and apparatus for the same | Syoichi Washizuka, Johji Nishio, Masayuki Watanabe | 1991-07-09 |
| 4960721 | Method for purifying group II-IV compound semiconductors | Masaru Kawachi, Hiroaki Yoshida | 1990-10-02 |
| 4816240 | Method of synthesizing Group III element-phosphorus compound | Masayuki Watanabe, Akinobu Kasami | 1989-03-28 |
| 4637854 | Method for producing GaAs single crystal | Tsuguo Fukuda | 1987-01-20 |
| 4606037 | Apparatus for manufacturing semiconductor single crystal | Tsuguo Fukuda | 1986-08-12 |
| 4586979 | Method for manufacture of III-V group compound semiconductor single crystal | Tooru Katsumata, Hiroaki Nakajima, Tsuguo Fukuda | 1986-05-06 |