TU

Takashi Udagawa

SK Showa Denko K.K.: 53 patents #3 of 1,736Top 1%
SD Showa Denko: 19 patents #2 of 593Top 1%
KC Kansai Paint Co.: 5 patents #120 of 822Top 15%
TD The Doshisha: 2 patents #23 of 175Top 15%
TO Toshiba: 2 patents #606 of 2,688Top 25%
TC Toyoda Gosei Co.: 2 patents #900 of 2,296Top 40%
📍 Chichibu, JP: #3 of 144 inventorsTop 3%
Overall (All Time): #22,270 of 4,157,543Top 1%
81
Patents All Time

Issued Patents All Time

Showing 1–25 of 81 patents

Patent #TitleCo-InventorsDate
9324912 Group III nitride semiconductor light-emitting element and method for producing same 2016-04-26
9076913 Group iii nitride semiconductor light-emitting element Hiroshi Udagawa 2015-07-07
8389975 Group III nitride semiconductor light-emitting device Tomo Kikuchi 2013-03-05
8299451 Semiconductor light-emitting diode 2012-10-30
8227790 Group III nitride semiconductor light-emitting device Tomo Kikuchi 2012-07-24
8222674 Semiconductor device having a group-III nitride superlattice layer on a silicon substrate Tadashi Ohachi 2012-07-17
8216367 Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrate 2012-07-10
8134176 Light-emitting diode and light-emitting diode lamp Ryouichi Takeuchi 2012-03-13
8084781 Compound semiconductor device 2011-12-27
8071991 Light-emitting diode and light-emitting diode lamp 2011-12-06
8043977 Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate Tadashi Ohachi 2011-10-25
8026525 Boron phosphide-based semiconductor light-emitting device 2011-09-27
7989926 Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof 2011-08-02
7790481 Compound semiconductor light-emitting device and production method thereof Ryouichi Takeuchi, Wataru Nabekura 2010-09-07
7781866 Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device 2010-08-24
7772599 Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure 2010-08-10
7759225 Method for fabricating semiconductor layer and light-emitting diode 2010-07-20
7759149 Gallium nitride-based semiconductor stacked structure 2010-07-20
7732830 Compound semiconductor light-emitting diode Ryouichi Takeuchi 2010-06-08
7732831 Compound semiconductor light-emitting device with AlGaInP light-emitting layer formed within Ryouichi Takeuchi, Wataru Nabekura 2010-06-08
7732832 Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor 2010-06-08
7646040 Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode 2010-01-12
7622398 Semiconductor device, semiconductor layer and production method thereof 2009-11-24
7598593 N-type ohmic electrode for n-type group III nitride semiconductor, semiconductor light-emitting device with the electrode, and method for forming n-type ohmic electrode 2009-10-06
7576365 Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same Kazuhiro Mitani, Katsuki Kusunoki 2009-08-18