Issued Patents All Time
Showing 51–75 of 81 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6797990 | Boron phosphide-based semiconductor device and production method thereof | — | 2004-09-28 |
| 6787814 | Group-III nitride semiconductor light-emitting device and production method thereof | — | 2004-09-07 |
| 6774402 | Pn-juction type compound semiconductor light-emitting device, production method thereof and white light-emitting diode | — | 2004-08-10 |
| 6730987 | Compound semiconductor device, production method thereof, light-emitting device and transistor | — | 2004-05-04 |
| 6730941 | Boron phosphide-based semiconductor light-emitting device, production method thereof, and light-emitting diode | — | 2004-05-04 |
| 6677615 | Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp | Ryouichi Takeuchi, Kazuhiro Mitani, Wataru Nabekura, Takaharu Hoshina | 2004-01-13 |
| 6664575 | GaInP stacked layer structure and field-effect transistor manufactured using the same | — | 2003-12-16 |
| 6645302 | Vapor phase deposition system | — | 2003-11-11 |
| 6541799 | Group-III nitride semiconductor light-emitting diode | — | 2003-04-01 |
| 6541797 | Group-III nitride semiconductor light-emitting device | — | 2003-04-01 |
| 6531716 | Group-III nitride semiconductor light-emitting device and manufacturing method for the same | — | 2003-03-11 |
| 6512248 | Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp | Ryouichi Takeuchi, Kazuhiro Mitani, Wataru Nabekura, Takaharu Hoshina | 2003-01-28 |
| 6462361 | GaInP epitaxial stacking structure and fabrication method thereof, and a FET transistor using this structure | Masahiro Kimura, Akira Kasahara, Taichi Okano | 2002-10-08 |
| 6403987 | Electrode for light-emitting semiconductor devices | Hisayuki Miki, Noritaka Muraki, Mineo Okuyama | 2002-06-11 |
| 6346719 | AlGaInP light-emitting diode | Toshiki Yoshiuji, Ryouichi Takeuchi | 2002-02-12 |
| 6335219 | Nitride semiconductor light-emitting device and manufacturing method of the same | — | 2002-01-01 |
| 6326223 | Electrode for light-emitting semiconductor devices and method of producing the electrode | Hisayuki Miki, Noritaka Muraki, Mineo Okuyama | 2001-12-04 |
| 6268618 | Electrode for light-emitting semiconductor devices and method of producing the electrode | Hisayuki Miki, Noritaka Muraki, Mineo Okuyama | 2001-07-31 |
| 6194744 | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer | Kazutaka Terashima, Suzuka Nishimura, Takuji Tsuzaki | 2001-02-27 |
| 6153894 | Group-III nitride semiconductor light-emitting device | — | 2000-11-28 |
| 6147363 | Nitride semiconductor light-emitting device and manufacturing method of the same | — | 2000-11-14 |
| 6110757 | Method of forming epitaxial wafer for light-emitting device including an active layer having a two-phase structure | — | 2000-08-29 |
| 6069021 | Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer | Kazutaka Terashima, Suzuka Nishimura, Takuji Tsuzaki | 2000-05-30 |
| 5886367 | Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer | — | 1999-03-23 |
| 5011733 | Process for coating metallic substrate | Tadayoshi Hiraki, Osamu Iwase, Hirosi Oosumimoto, Shinji Sugiura, Ichiro Tabushi +3 more | 1991-04-30 |