TS

Takeshi Senda

GC Globalwafers Japan Co.: 6 patents #3 of 44Top 7%
CM Covalent Materials: 4 patents #7 of 81Top 9%
TC Toshiba Ceramics Co.: 3 patents #54 of 458Top 15%
HI Hitachi: 1 patents #17,742 of 28,497Top 65%
SM Shibaura Mechatronics: 1 patents #96 of 175Top 55%
Overall (All Time): #333,883 of 4,157,543Top 9%
14
Patents All Time

Issued Patents All Time

Showing 1–14 of 14 patents

Patent #TitleCo-InventorsDate
12308228 Manufacturing method for semiconductor silicon wafer Shingo Narimatsu 2025-05-20
12046469 Manufacturing method for semiconductor silicon wafer Shingo Narimatsu 2024-07-23
10141180 Silicon wafer and method for manufacturing the same Koji Araki, Tatsuhiko Aoki, Haruo Sudo 2018-11-27
9421712 Laser joining method Satoshi Arai 2016-08-23
9059099 Thermal treatment method of silicon wafer and silicon wafer Koji Araki 2015-06-16
8999864 Silicon wafer and method for heat-treating silicon wafer Hiromichi Isogai, Eiji Toyoda, Koji Araki, Tatsuhiko Aoki, Haruo Sudo +4 more 2015-04-07
8476149 Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process Hiromichi Isogai, Eiji Toyoda, Kumiko Murayama, Koji Izunome, Susumu Maeda +7 more 2013-07-02
8399341 Method for heat treating a silicon wafer Hiromichi Isogai, Eiji Toyoda, Kumiko Murayama, Koji Araki, Tatsuhiko Aoki +4 more 2013-03-19
8252700 Method of heat treating silicon wafer Hiromichi Isogai, Eiji Toyoda, Kumiko Murayama, Koji Araki, Tatsuhiko Aoki +4 more 2012-08-28
7977219 Manufacturing method for silicon wafer Hiromichi Isogai, Eiji Toyoda, Kumiko Murayama, Koji Izunome, Susumu Maeda +1 more 2011-07-12
7679730 Surface inspection apparatus and surface inspection method for strained silicon wafer Hideaki Takano, Miyuki Shimizu, Koji Izunome, Yoshinori Hayashi, Kazuhiko Hamatani 2010-03-16
7250357 Manufacturing method for strained silicon wafer Koji Izunome 2007-07-31
7247583 Manufacturing method for strained silicon wafer Hisatsugu Kurita, Masato Igarashi, Koji Izunome 2007-07-24
7060597 Manufacturing method for a silicon substrate having strained layer Hisatsugu Kurita, Masato Igarashi, Koji Izunome 2006-06-13