Issued Patents All Time
Showing 26–50 of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 4618878 | Semiconductor device having a multilayer wiring structure using a polyimide resin | Masaharu Aoyama, Masahiro Abe, Takashi Ajima | 1986-10-21 |
| 4610079 | Method of dicing a semiconductor wafer | Masahiro Abe, Masafumi Miyagawa, Hatsuo Nakamura | 1986-09-09 |
| 4587928 | Apparatus for producing a semiconductor device | Hisashi Muraoka | 1986-05-13 |
| 4589004 | Semiconductor device monolithically comprising a V-MOSFET and bipolar transistor isolated from each other | Seiji Yasuda, Shunichi Hiraki, Masafumi Miyagawa | 1986-05-13 |
| 4566174 | Semiconductor device and method for manufacturing the same | Seiji Yasuda, Yutaka Koshino | 1986-01-28 |
| 4561009 | Semiconductor device | Masaharu Aoyama | 1985-12-24 |
| 4560642 | Method of manufacturing a semiconductor device | Takashi Ajima, Shunichi Hiraki, Yutaka Koshino, Yoshitami Oka | 1985-12-24 |
| 4542400 | Semiconductor device with multi-layered structure | Shunichi Hiraki, Kuniaki Kumamaru, Yutaka Koshino | 1985-09-17 |
| 4525523 | Negative-working photoresist coating composition | Hatsuo Nakamura, Tiharu Kato, Shigeo Koguchi, Kiyoto Mori, Masahiko Igarashi | 1985-06-25 |
| 4521256 | Method of making integrated devices having long and short minority carrier lifetimes | Shunichi Hiraki, Hiroshi Kinoshita, Kuniaki Kumamaru, Shigeo Koguchi | 1985-06-04 |
| 4520041 | Method for forming metallization structure having flat surface on semiconductor substrate | Masaharu Aoyama, Masahiro Abe, Takashi Ajima | 1985-05-28 |
| 4507673 | Semiconductor memory device | Masaharu Aoyama, Shunichi Hiraki | 1985-03-26 |
| 4485393 | Semiconductor device with selective nitride layer over channel stop | Kuniaki Kumamaru, Shunichi Hiraki | 1984-11-27 |
| 4479830 | Method of manufacturing a semiconductor device using epitaxially regrown protrusion as an alignment marker | Yutaka Koshino, Jiro Ohshima, Takashi Ajima | 1984-10-30 |
| 4462856 | System for etching a metal film on a semiconductor wafer | Masahiro Abe, Masaharu Aoyama, Takashi Ajima | 1984-07-31 |
| 4461825 | Method for forming resist pattern | Tiharu Kato, Hatsuo Nakamura, Shigeo Koguchi, Toshihiro Abe | 1984-07-24 |
| 4433004 | Semiconductor device and a method for manufacturing the same | Masaharu Aoyama | 1984-02-21 |
| 4426234 | Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing | Jiro Ohshima, Yutaka Koshino, Takashi Ajima | 1984-01-17 |
| 4415372 | Method of making transistors by ion implantations, electron beam irradiation and thermal annealing | Yutaka Koshino, Takashi Ajima, Jiro Ohshima | 1983-11-15 |
| 4403392 | Method of manufacturing a semiconductor device | Jiro Oshima, Masaharu Aoyama, Seiji Yasuda | 1983-09-13 |
| 4379726 | Method of manufacturing semiconductor device utilizing outdiffusion and epitaxial deposition | Kuniaki Kumamaru, Shunichi Hiraki | 1983-04-12 |
| 4351894 | Method of manufacturing a semiconductor device using silicon carbide mask | Takashi Ajima, Shunichi Hiraki, Yutaka Koshino, Yoshitami Oka | 1982-09-28 |
| 4334349 | Method of producing semiconductor device | Masaharu Aoyama, Jiro Ohshima | 1982-06-15 |
| 4263067 | Fabrication of transistors having specifically paired dopants | Kouichi Takahashi, Hidekuni Ishida | 1981-04-21 |
| 4240096 | Fluorine-doped P type silicon | Shunichi Hiraki, Kuniaki Kumamaru, Masaharu Aoyama | 1980-12-16 |