ZF

Ziwei Fang

TSMC: 155 patents #119 of 12,232Top 1%
VA Varian Semiconductor Equipment Associates: 14 patents #51 of 513Top 10%
FC Fuyao Glass Industry Group Co.: 1 patents #16 of 52Top 35%
📍 Fujian, CA: #2 of 54 inventorsTop 4%
Overall (All Time): #4,751 of 4,157,543Top 1%
170
Patents All Time

Issued Patents All Time

Showing 76–100 of 170 patents

Patent #TitleCo-InventorsDate
11031490 Fabrication of field effect transistors with ferroelectric materials Cheng-Ming Lin, Sai-Hooi Yeong, Chi On Chui, Huang-Lin Chao 2021-06-08
11018022 Method for forming semiconductor device structure having oxide layer I-Ming Chang, Chih-Cheng Lin, Chi-Ying Wu, Wei-Ming You, Huang-Lin Chao 2021-05-25
11018256 Selective internal gate structure for ferroelectric semiconductor devices Cheng-Ming Lin, Sai-Hooi Yeong, Chi On Chui, Huang-Lin Chao 2021-05-25
11007005 Method of manufacturing a semiconductor device and a semiconductor device Tung Ying Lee, Yee-Chia Yeo, Meng-Hsuan Hsiao 2021-05-18
10985022 Gate structures having interfacial layers Chung-Liang Cheng, Chun-I Wu, Huang-Lin Chao 2021-04-20
10985265 Method for forming semiconductor device structure Chung-Liang Cheng, I-Ming Chang, Hsiang-Pi Chang, Hsueh Wen Tsau, Huang-Lin Chao 2021-04-20
10978567 Gate stack treatment for ferroelectric transistors Cheng-Ming Lin, Sai-Hooi Yeong, Chi On Chui, Huang-Lin Chao 2021-04-13
10978357 Semiconductor arrangement and method of manufacture I-Ming Chang, Chung-Liang Cheng, Hsiang-Pi Chang, Hsueh Wen Tsau 2021-04-13
10971402 Semiconductor device including interface layer and method of fabricating thereof Chung-Liang Cheng, I-Ming Chang, Hsiang-Pi Chang, Yu-Wei Lu, Huang-Lin Chao 2021-04-06
10964542 Selective high-K formation in gate-last process Yasutoshi Okuno, Teng-Chun Tsai, Fu-Ting Yen 2021-03-30
10964792 Dual metal capped via contact structures for semiconductor devices Chung-Liang Cheng 2021-03-30
10923393 Contacts and interconnect structures in field-effect transistors Chung-Liang Cheng 2021-02-16
10879246 Methods of fabricating semiconductor devices having gate-all-around structure with oxygen blocking layers Chung-Liang Cheng 2020-12-29
10872970 Source and drain formation technique for fin-like field effect transistor Chun Hsiung Tsai, Kuo-Feng Yu 2020-12-22
10868171 Semiconductor device structure with gate dielectric layer and method for forming the same Chung-Liang Cheng 2020-12-15
10868140 Gap-filling germanium through selective bottom-up growth De-Wei Yu, Chien-Hao Chen, Yee-Chia Yeo 2020-12-15
10868151 Conformal transfer doping method for fin-like field effect transistor Sai-Hooi Yeong, Sheng-Chen Wang, Bo-Yu Lai, Feng-Cheng Yang, Yen-Ming Chen 2020-12-15
10861751 Method of semiconductor integrated circuit fabrication De-Wei Yu, Chia Ping Lo, Liang-Gi Yao, Weng Chang, Yee-Chia Yeo 2020-12-08
10854729 Method to reduce etch variation using ion implantation Tsan-Chun Wang, Chii-Horng Li, Tze-Liang Lee, Chao-Cheng Chen, Syun-Ming Jang 2020-12-01
10854503 Semiconductor structure with air gap and method sealing the air gap Hung-Chang Sun, Akira Mineji 2020-12-01
10847431 Ion implantation methods and structures thereof Tsan-Chun Wang, Chun Hsiung Tsai 2020-11-24
10818768 Method for forming metal cap layers to improve performance of semiconductor structure Chung-Liang Cheng 2020-10-27
10811253 Methods of fabricating semiconductor devices having crystalline high-K gate dielectric layer Chung-Liang Cheng 2020-10-20
10770563 Gate structure and patterning method for multiple threshold voltages Chung-Liang Cheng 2020-09-08
10749008 Gate structure, semiconductor device and the method of forming semiconductor device Chun Hsiung Tsai, Kuo-Feng Yu, Chien-Tai Chan, Kei-Wei Chen, Huai-Tei Yang 2020-08-18