Issued Patents All Time
Showing 51–75 of 170 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11387363 | Source/drain junction formation | Chun Hsiung Tsai, Sheng-Wen Yu | 2022-07-12 |
| 11380772 | Gate structure and patterning method for multiple threshold voltages | Chung-Liang Cheng | 2022-07-05 |
| 11373910 | Semiconductor device including a Fin-FET and method of manufacturing the same | Yasutoshi Okuno, Cheng-Yi Peng, I-Ming Chang, Akira Mineji, Yu-Ming Lin +1 more | 2022-06-28 |
| 11342231 | Integrated circuit device with low threshold voltage | Chung-Liang Cheng | 2022-05-24 |
| 11289482 | Field effect transistor contact with reduced contact resistance | Su-Hao Liu, Yan-Ming Tsai, Chung-Ting Wei, Chih-Wei Chang, Chien-Hao Chen +1 more | 2022-03-29 |
| 11289479 | Fin-type field effect transistor structure and manufacturing method thereof | Chun Hsiung Tsai, Tsan-Chun Wang, Kei-Wei Chen | 2022-03-29 |
| 11282940 | Field effect transistors with ferroelectric dielectric materials | Cheng-Ming Lin, Kai Tak Lam, Sai-Hooi Yeong, Chi On Chui | 2022-03-22 |
| 11264503 | Metal gate structures of semiconductor devices | Chung-Liang Cheng | 2022-03-01 |
| 11257923 | Tuning threshold voltage in field-effect transistors | Hsueh Wen Tsau, Huang-Lin Chao, Kuo-Liang Sung | 2022-02-22 |
| 11251087 | Semiconductor device including a Fin-FET and method of manufacturing the same | Yasutoshi Okuno, Cheng-Yi Peng, I-Ming Chang, Akira Mineji, Yu-Ming Lin +1 more | 2022-02-15 |
| 11251078 | Formation method of semiconductor device with fin structures | Chung-Liang Cheng | 2022-02-15 |
| 11227951 | Method of forming semiconductor device | Chun Hsiung Tsai, Chien-Tai Chan, Kei-Wei Chen, Huai-Tei Yang | 2022-01-18 |
| 11211244 | Ultraviolet radiation activated atomic layer deposition | Christine Y Ouyang | 2021-12-28 |
| 11201060 | Structure and formation method of semiconductor device with metal gate stack | Christine Y Ouyang | 2021-12-14 |
| 11195931 | Gate structure, semiconductor device and the method of forming semiconductor device | Chun Hsiung Tsai, Kuo-Feng Yu, Chien-Tai Chan, Kei-Wei Chen, Huai-Tei Yang | 2021-12-07 |
| 11195938 | Device performance by fluorine treatment | Cheng-Ming Lin, Sai-Hooi Yeong, Chi On Chui | 2021-12-07 |
| 11183574 | Work function layers for transistor gate electrodes | Chung-Liang Cheng, Chun-I Wu, Huang-Lin Chao | 2021-11-23 |
| 11177259 | Multi-threshold gate structure with doped gate dielectric layer | Chung-Liang Cheng, I-Ming Chang, Huang-Lin Chao | 2021-11-16 |
| 11164796 | Method for forming semiconductor device structure | Chung-Liang Cheng | 2021-11-02 |
| 11139397 | Self-aligned metal compound layers for semiconductor devices | Cheng-Ming Lin, Sai-Hooi Yeong, Chi On Chui, Huang-Lin Chao | 2021-10-05 |
| 11127832 | Semiconductor structure and method for forming the same | Chung-Liang Cheng | 2021-09-21 |
| 11088034 | Gate structures for semiconductor devices | Chung-Liang Cheng | 2021-08-10 |
| 11069807 | Ferroelectric structure for semiconductor devices | Cheng-Ming Lin, Sai-Hooi Yeong, Bo-Feng Young, Chi On Chui, Chih-Yu Chang +1 more | 2021-07-20 |
| 11038029 | Semiconductor device structure and method for forming the same | Hsueh Wen Tsau, Chun-I Wu, Huang-Lin Chao, I-Ming Chang, Chung-Liang Cheng +1 more | 2021-06-15 |
| 11031490 | Fabrication of field effect transistors with ferroelectric materials | Cheng-Ming Lin, Sai-Hooi Yeong, Chi On Chui, Huang-Lin Chao | 2021-06-08 |