Issued Patents All Time
Showing 126–150 of 286 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10714680 | Large height tree-like sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices | Yi Yang, Dongna Shen | 2020-07-14 |
| 10714679 | CMP stop layer and sacrifice layer for high yield small size MRAM devices | Yi Yang, Zhongjian Teng | 2020-07-14 |
| 10700269 | Post treatment to reduce shunting devices for physical etching process | Dongna Shen, Vignesh Sundar, Sahil Patel | 2020-06-30 |
| 10693511 | Wireless user signal reception based on multiple directions-of-arrival | Sanghoon Sung, Udit Thakore, George William Harter, III | 2020-06-23 |
| 10680168 | Ion beam etching fabricated sub 30nm vias to reduce conductive material re-deposition for sub 60nm MRAM devices | Yi Yang, Dongna Shen, Zhongjian Teng, Jesmin Haq | 2020-06-09 |
| 10658409 | Semiconductor structure and method of manufacturing the same | Sheng-Chan Li, I-Nan Chen, Tzu-Hsiang Chen, Yen-Ting Chiang, Cheng-Hsien Chou +1 more | 2020-05-19 |
| 10648069 | Monolayer-by-monolayer growth of MgO layers using Mg sublimation and oxidation | Sahil Patel, Guenole Jan | 2020-05-12 |
| 10644782 | Data compression for wireless relays in a data communication network | Zheng Fang, Zheng Cai, Pei Hou | 2020-05-05 |
| 10631358 | Physical layer split in a multi-radio access technology (RAT) central unit (CU) | Zheng Fang, Zheng Cai | 2020-04-21 |
| 10624245 | Laser weldable brackets for attachment of heat sinks to board level shields | — | 2020-04-14 |
| 10622047 | Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer | Hideaki Fukuzawa, Vignesh Sundar, Ru-Ying Tong | 2020-04-14 |
| 10603601 | Party popper | — | 2020-03-31 |
| 10587321 | Carrier aggregation (CA) control based on multi-user multiple input multiple output (MIMO) usage | Sanghoon Sung, Udit Thakore, Dhaval Mehta | 2020-03-10 |
| 10587373 | Controlling transmission based on acknowledgement delay | Zheng Cai, Zheng Fang, Udit Thakore | 2020-03-10 |
| 10522745 | Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions | Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen +2 more | 2019-12-31 |
| 10522751 | MTJ CD variation by HM trimming | Dongna Shen, Yi Yang, Jesmin Haq | 2019-12-31 |
| 10522750 | Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM devices | Yi Yang | 2019-12-31 |
| 10522749 | Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage | Dongna Shen, Ru-Ying Tong, Vignesh Sundar, Sahil Patel | 2019-12-31 |
| 10522753 | Highly selective ion beam etch hard mask for sub 60nm MRAM devices | Yi Yang, Dongna Shen | 2019-12-31 |
| 10522741 | Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process | Yi Yang, Dongna Shen | 2019-12-31 |
| 10522746 | Dual magnetic tunnel junction devices for magnetic random access memory (MRAM) | Vignesh Sundar, Luc Thomas, Guenole Jan | 2019-12-31 |
| 10516101 | Physical cleaning with in-situ dielectric encapsulation layer for spintronic device application | Keyu Pi, Ru-Ying Tong | 2019-12-24 |
| 10516102 | Multiple spacer assisted physical etching of sub 60nm MRAM devices | Yi Yang, Dongna Shen | 2019-12-24 |
| 10516100 | Silicon oxynitride based encapsulation layer for magnetic tunnel junctions | Vignesh Sundar, Dongna Shen, Sahil Patel, Ru-Ying Tong | 2019-12-24 |
| 10510789 | Extra doped region for back-side deep trench isolation | Chun-Yuan Chen, Ching-Chun Wang, Dun-Nian Yaung, Hsiao-Hui Tseng, Jhy-Jyi Sze +4 more | 2019-12-17 |