YL

Ying-Keung Leung

TSMC: 90 patents #307 of 12,232Top 3%
CM Chartered Semiconductor Manufacturing: 25 patents #27 of 840Top 4%
GP Globalfoundries Singapore Pte.: 7 patents #107 of 828Top 15%
PF Parabellum Strategic Opportunities Fund: 1 patents #3 of 25Top 15%
Overall (All Time): #9,291 of 4,157,543Top 1%
124
Patents All Time

Issued Patents All Time

Showing 101–124 of 124 patents

Patent #TitleCo-InventorsDate
6709934 Method for forming variable-K gate dielectric James Yong Meng Lee, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan, Elgin Quek +2 more 2004-03-23
6541327 Method to form self-aligned source/drain CMOS device on insulated staircase oxide Lap Chan, Elgin Quek, Ravi Sundaresan, Yang Pan, James Yong Meng Lee +2 more 2003-04-01
6511884 Method to form and/or isolate vertical transistors Elgin Quek, Ravi Sundaresan, Yang Pan, Yong Meng Lee, Yelehanka Ramachandramurthy Pradeep +2 more 2003-01-28
6492726 Chip scale packaging with multi-layer flip chip arrangement and ball grid array interconnection Shyue Fong Quek, Sang Yee Loong, Ting Cheong Ang 2002-12-10
6468877 Method to form an air-gap under the edges of a gate electrode by using disposable spacer/liner Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan, Elgin Quek, Ravi Sundaresan +2 more 2002-10-22
6461900 Method to form a self-aligned CMOS inverter using vertical device integration Ravi Sundaresan, Yang Pan, James Lee Yong Meng, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng +2 more 2002-10-08
6461887 Method to form an inverted staircase STI structure by etch-deposition-etch and selective epitaxial growth Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan, Elgin Quek, Ravi Sundaresan +2 more 2002-10-08
6455377 Method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs) Jia Zhen Zheng, Lap Chan, Elgin Quek, Ravi Sundaresan, Yang Pan +2 more 2002-09-24
6440800 Method to form a vertical transistor by selective epitaxial growth and delta doped silicon layers James Yong Meng Lee, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan, Elgin Quek +2 more 2002-08-27
6436774 Method for forming variable-K gate dielectric James Yong Meng Lee, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan, Elgin Quek +2 more 2002-08-20
6436770 Method to control the channel length of a vertical transistor by first forming channel using selective epi and source/drain using implantation Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan, Elgin Quek, Ravi Sundaresan +2 more 2002-08-20
6417056 Method to form low-overlap-capacitance transistors by forming microtrench at the gate edge Elgin Quek, Ravi Sundaresan, Yang Pan, James Yong Meng Lee, Yelehanka Ramachandramurthy Pradeep +2 more 2002-07-09
6417054 Method for fabricating a self aligned S/D CMOS device on insulated layer by forming a trench along the STI and fill with oxide Jia Zhen Zheng, Lap Chan, Elgin Quek, Ravi Sundaresan, Yang Pan +2 more 2002-07-09
6406945 Method for forming a transistor gate dielectric with high-K and low-K regions James Yong Meng Lee, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan, Elgin Quek +2 more 2002-06-18
6380088 Method to form a recessed source drain on a trench side wall with a replacement gate technique Lap Chan, Elgin Quek, Ravi Sundaresan, Yang Pan, James Yong Meng Lee +2 more 2002-04-30
6313008 Method to form a balloon shaped STI using a micro machining technique to remove heavily doped silicon Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan, Elgin Quek, Ravi Sundaresan +2 more 2001-11-06
6306715 Method to form smaller channel with CMOS device by isotropic etching of the gate materials Lap Chan, Elgin Quek, Ravi Sundaresan, Yang Pan, James Yong Meng Lee +2 more 2001-10-23
6306714 Method to form an elevated S/D CMOS device by contacting S/D through the contact of oxide Yang Pan, James Yongmeng Lee, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan +2 more 2001-10-23
6303449 Method to form self-aligned elevated source/drain by selective removal of gate dielectric in the source/drain region followed by poly deposition and CMP Yang Pan, James Yong Meng Lee, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng, Lap Chan +2 more 2001-10-16
6300177 Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materials Ravi Sundaresan, Yang Pan, James Yong Meng Lee, Yelehanka Ramachandramurthy Pradeep, Jia Zhen Zheng +2 more 2001-10-09
6156598 Method for forming a lightly doped source and drain structure using an L-shaped spacer Mei Sheng Zhou, Yelehanka Ramachandramurthy Pradeep, Jie Yu 2000-12-05
6100161 Method of fabrication of a raised source/drain transistor Xing Yu, Hong-Seon Yang, Shyue Fong Quek 2000-08-08
6096647 Method to form CoSi.sub.2 on shallow junction by Si implantation Hong-Seon Yang, Xing Yu 2000-08-01
6090691 Method for forming a raised source and drain without using selective epitaxial growth Ting Cheong Ang, Shyue Fong Quek, Xing Yu 2000-07-18