Issued Patents All Time
Showing 26–50 of 75 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6635211 | Reinforced polishing pad for linear chemical mechanical polishing and method for forming | Wen-Chih Chiou, Tsu Shih, Syun-Ming Jang | 2003-10-21 |
| 6620725 | Reduction of Cu line damage by two-step CMP | Shau-Lin Shue, Ming-Hsing Tsai, Wen-Jye Tsai, Tsu Shih, Jih-Churng Twu +1 more | 2003-09-16 |
| 6620034 | Way to remove Cu line damage after Cu CMP | Tsu Shih, Jih-Churng Jwu, Syun-Ming Jang | 2003-09-16 |
| 6589872 | Use of low-high slurry flow to eliminate copper line damages | Jih-Churng Twu, Tsu Shih, Syun-Ming Jang | 2003-07-08 |
| 6544891 | Method to eliminate post-CMP copper flake defect | Wen-Chih Chiou, Tsu Shih, Syun-Ming Jang | 2003-04-08 |
| 6518183 | Hillock inhibiting method for forming a passivated copper containing conductor layer | Weng Chang, Tien-I Bao, Syun-Ming Jang | 2003-02-11 |
| 6500753 | Method to reduce the damages of copper lines | Syun-Ming Jang, Jih-Churng Twu, Chen-Hua Yu | 2002-12-31 |
| 6440840 | Damascene process to eliminate copper defects during chemical-mechanical polishing (CMP) for making electrical interconnections on integrated circuits | — | 2002-08-27 |
| 6429118 | Elimination of electrochemical deposition copper line damage for damascene processing | Syun-Ming Jang, Jih-Churng Twu, Tsu Shih | 2002-08-06 |
| 6422929 | Polishing pad for a linear polisher and method for forming | Syun-Ming Jang | 2002-07-23 |
| 6417106 | Underlayer liner for copper damascene in low k dielectric | Jih-Churng Twu, Tsu Shih, Syun-Ming Jang | 2002-07-09 |
| 6409587 | Dual-hardness polishing pad for linear polisher and method for fabrication | Tsu Shih, Syun-Ming Jang, Wen-Chih Chiou | 2002-06-25 |
| 6398627 | Slurry dispenser having multiple adjustable nozzles | Wen-Chih Chiou, Tsu Shih, Syun-Ming Jang | 2002-06-04 |
| 6391777 | Two-stage Cu anneal to improve Cu damascene process | Syun-Ming Jang | 2002-05-21 |
| 6391780 | Method to prevent copper CMP dishing | Tsu Shih, Jih-Churng Twu | 2002-05-21 |
| 6383930 | Method to eliminate copper CMP residue of an alignment mark for damascene processes | Wen-Chih Chiou, Tsu Shih, Syun-Ming Jang | 2002-05-07 |
| 6376377 | Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicity | Weng Chang, Jih-Churng Twu, Syun-Ming Jang | 2002-04-23 |
| 6365523 | Integrated high density plasma chemical vapor deposition (HDP-CVD) method and chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layers | Syun-Ming Jang, Chu-Yun Fu | 2002-04-02 |
| 6358119 | Way to remove CU line damage after CU CMP | Tsu Shih, Jih-Churng Twu, Syun-Ming Jang | 2002-03-19 |
| 6274483 | Method to improve metal line adhesion by trench corner shape modification | Weng Chang, Syun-Ming Jang | 2001-08-14 |
| 6239023 | Method to reduce the damages of copper lines | Syun-Ming Jang, Jih-Churng Twu, Chen-Hua Yu | 2001-05-29 |
| 6239002 | Thermal oxidizing method for forming with attenuated surface sensitivity ozone-teos silicon oxide dielectric layer upon a thermally oxidized silicon substrate layer | Syun-Ming Jang, Chen-Hua Yu | 2001-05-29 |
| 6227947 | Apparatus and method for chemical mechanical polishing metal on a semiconductor wafer | Tien-Chen Hu, Jih-Churng Twu, Tsu Shih | 2001-05-08 |
| 6197660 | Integration of CMP and wet or dry etching for STI | Syun-Ming Jang | 2001-03-06 |
| 6194307 | Elimination of copper line damages for damascene process | Syun-Ming Jang | 2001-02-27 |