Issued Patents All Time
Showing 51–75 of 75 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6171896 | Method of forming shallow trench isolation by HDPCVD oxide | Syun-Ming Jang, Chen-Hua Yu | 2001-01-09 |
| 6143673 | Method for forming gap filling silicon oxide intermetal dielectric (IMD) layer formed employing ozone-tEOS | Syun-Ming Jang, Shwangming Jeng, Chen-Hua Yu | 2000-11-07 |
| 6100163 | Gap filling of shallow trench isolation by ozone-tetraethoxysilane | Syun-Ming Jang, Chen-Hua Yu | 2000-08-08 |
| 6080656 | Method for forming a self-aligned copper structure with improved planarity | Tsu Shih, Jih-Churng Twu, Syun-Ming Jang | 2000-06-27 |
| 6049137 | Readable alignment mark structure formed using enhanced chemical mechanical polishing | Syun-Ming Jang, Chung-Long Chang, Chen-Hua Yu | 2000-04-11 |
| 6043133 | Method of photo alignment for shallow trench isolation chemical-mechanical polishing | Syun-Ming Jang, Jui-Yu Chang, Chen-Hua Yu | 2000-03-28 |
| 6043136 | Trench filling method employing oxygen densified gap filling CVD silicon oxide layer | Syun-Ming Jang, Chen-Hua Yu | 2000-03-28 |
| 5968687 | Mask for recovering alignment marks after chemical mechanical polishing | Jui-Yu Chang, Chunshing Chen, Syun-Ming Jang | 1999-10-19 |
| 5869384 | Trench filling method employing silicon liner layer and gap filling silicon oxide trench fill layer | Chen-Hua Yu, Syun-Ming Jang | 1999-02-09 |
| 5858588 | Method for recovering alignment marks after chemical mechanical polishing | Jui-Yu Chang, Chunshing Chen, Syun-Ming Jang | 1999-01-12 |
| 5817567 | Shallow trench isolation method | Syun-Ming Jang, Chen-Hua Yu | 1998-10-06 |
| 5817566 | Trench filling method employing oxygen densified gap filling silicon oxide layer formed with low ozone concentration | Syun-Ming Jang, Chen-Hua Yu | 1998-10-06 |
| 5786260 | Method of fabricating a readable alignment mark structure using enhanced chemical mechanical polishing | Syun-Ming Jang, Chung-Long Chang, Chen-Hua Yu | 1998-07-28 |
| 5741740 | Shallow trench isolation (STI) method employing gap filling silicon oxide dielectric layer | Syun-Ming Jang, Chen-Hua Yu | 1998-04-21 |
| 5731241 | Self-aligned sacrificial oxide for shallow trench isolation | Syun-Ming Jang, Chen-Hua Yu | 1998-03-24 |
| 5726090 | Gap-filling of O.sub.3 -TEOS for shallow trench isolation | Syun-Ming Jang, Chen-Hua Yu | 1998-03-10 |
| 5721172 | Self-aligned polish stop layer hard masking method for forming planarized aperture fill layers | Syun-Ming Jang, Chen-Hua Yu | 1998-02-24 |
| 5702977 | Shallow trench isolation method employing self-aligned and planarized trench fill dielectric layer | Syun-Ming Jang, Chen-Hua Yu | 1997-12-30 |
| 4806555 | 1-aryloxy-4-amino-2-butanols | Carl D. Lunsford | 1989-02-21 |
| 4609735 | Certain aryloxy-4-chloro-2-butanol intermediates | Carl D. Lunsford | 1986-09-02 |
| 4538001 | 1-Aryloxy-4-amino-2-butanols | Carl D. Lunsford | 1985-08-27 |
| 4463190 | 1-Aryloxy-4-amino-2-butanols | Carl D. Lunsford | 1984-07-31 |
| 4379167 | 1-Aryloxy-4-amino-2-butanols and the pharmaceutical use thereof | Carl D. Lunsford | 1983-04-05 |
| 4377582 | 2-Phenyl-4-[cis-2,5-dimethyl-4-(2-pyridinyl)-1-piperazinyl]quinazoline | — | 1983-03-22 |
| 4306065 | 2-Aryl-4-substituted quinazolines | — | 1981-12-15 |