Issued Patents All Time
Showing 101–125 of 167 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11776595 | Memory device with source line control | Perng-Fei Yuh | 2023-10-03 |
| 11770934 | Semiconductor structure and method of fabricating the same | Bo-Feng Young, Sai-Hooi Yeong, Shih-Lien Linus Lu, Chia-En Huang, Yu-Ming Lin | 2023-09-26 |
| 11758715 | System and method for reducing cell area and current leakage in anti-fuse cell array | Meng-Sheng Chang, Chia-En Huang, Shao-Yu Chou | 2023-09-12 |
| 11756640 | MIM efuse memory devices and fabrication method thereof | Meng-Sheng Chang, Chia-En Huang | 2023-09-12 |
| 11756591 | Switches to reduce routing rails of memory system | Meng-Sheng Chang, Chia-En Huang, Yi-Ching Liu | 2023-09-12 |
| 11749664 | Memory circuits | Yi-Ching Liu, Chia-En Huang | 2023-09-05 |
| 11742021 | Memory device with write pulse trimming | Hiroki Noguchi, Yu-Der Chih | 2023-08-29 |
| 11735235 | Series of parallel sensing operations for multi-level cells | Qing Dong, Mahmut Sinangil, Yen-Ting Lin, Kerem Akarvardar, Carlos H. Diaz | 2023-08-22 |
| 11735259 | Read method, write method and memory circuit using the same | Carlos H. Diaz, Hung-Li Chiang, Tzu-Chiang Chen | 2023-08-22 |
| 11735280 | Memory device and operating method of the same | Gu-Huan Li, Tung-Cheng Chang, Perng-Fei Yuh, Chia-En Huang, Chun-Ying Lee | 2023-08-22 |
| 11714570 | Computing-in-memory device and method | Jonathan Tsung-Yung Chang, Hidehiro Fujiwara, Hung-Jen Liao, Yen-Huei Chen, Haruki Mori | 2023-08-01 |
| 11705177 | Semiconductor memory devices and methods of manufacturing thereof | Peng-Chun Liou, Zhiqiang Wu, Chung-Wei Wu, Yi-Ching Liu | 2023-07-18 |
| 11696437 | Integrated circuit device | Meng-Sheng Chang, Chien-Ying Chen, Chia-En Huang | 2023-07-04 |
| 11688481 | Semiconductor memory devices with diode-connected MOS | Perng-Fei Yuh, Tung-Cheng Chang, Gu-Huan Li, Chia-En Huang, Jimmy Lee | 2023-06-27 |
| 11681468 | Memory device for scheduling maximum number of memory macros write operations at re-arranged time intervals | Hiroki Noguchi, Shih-Lien Linus Lu, Yu-Der Chih | 2023-06-20 |
| 11682433 | Multiple stack high voltage circuit for memory | Perng-Fei Yuh, Meng-Sheng Chang, Tung-Cheng Chang | 2023-06-20 |
| 11676648 | Current steering in reading magnetic tunnel junction | Gaurav Gupta, Zhiqiang Wu | 2023-06-13 |
| 11676641 | Memory systems with vertical integration | Chieh Lee, Yi-Ching Liu, Chia-En Huang, Chang Jen-Yuan | 2023-06-13 |
| 11657873 | Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells | Perng-Fei Yuh, Ku-Feng Lin, Jui-Che Tsai, Hiroki Noguchi, Fu-An Wu | 2023-05-23 |
| 11653492 | Memory devices and methods of manufacturing thereof | Meng-Sheng Chang, Chia-En Huang | 2023-05-16 |
| 11631440 | Sensing amplifier, method and controller for sensing memory cell | Hiroki Noguchi, Ku-Feng Lin | 2023-04-18 |
| 11605639 | One-time-programmable memory device including an antifuse structure and methods of forming the same | Meng-Sheng Chang, Chia-En Huang | 2023-03-14 |
| 11605427 | Memory device with write pulse trimming | Hiroki Noguchi, Yu-Der Chih | 2023-03-14 |
| 11601117 | Sense amplifier for coupling effect reduction | Ku-Feng Lin, Jui-Che Tsai, Perng-Fei Yuh | 2023-03-07 |
| 11600626 | Semiconductor device including anti-fuse cell | Meng-Sheng Chang, Yao-Jen Yang, Fu-An Wu | 2023-03-07 |