YW

Yih Wang

TSMC: 167 patents #104 of 12,232Top 1%
Overall (All Time): #4,911 of 4,157,543Top 1%
167
Patents All Time

Issued Patents All Time

Showing 51–75 of 167 patents

Patent #TitleCo-InventorsDate
12114506 Semiconductor structure and method of fabricating the same Bo-Feng Young, Sai-Hooi Yeong, Shih-Lien Linus Lu, Chia-En Huang, Yu-Ming Lin 2024-10-08
12094558 Multiple stack high voltage circuit for memory Perng-Fei Yuh, Meng-Sheng Chang, Tung-Cheng Chang 2024-09-17
12089414 Memory device and method of forming the same Bo-Feng Young, Sai-Hooi Yeong, Shih-Lien Linus Lu, Chia-En Huang, Yu-Ming Lin 2024-09-10
12089402 Integrated circuit layout and method Meng-Sheng Chang, Chien-Ying Chen, Chia-En Huang 2024-09-10
12087354 Memory device Tzu-Hsien Yang, Chia-En Huang, Jonathan Tsung-Yung Chang 2024-09-10
12087345 Balanced negative bitline voltage for a write assist circuit Jui-Che Tsai, Chia-En Huang, Chia-Cheng Chen 2024-09-10
12075614 MIM memory cell with backside interconnect structures Meng-Sheng Chang, Chia-En Huang 2024-08-27
12068284 Vertical interconnect structures with integrated circuits Tzu-Hsien Yang, Hiroki Noguchi, Mahmut Sinangil 2024-08-20
12063786 Compute-in-memory device and method Chieh Lee, Chia-En Huang, Yi-Ching Liu, Wen-Chang Cheng 2024-08-13
12063773 Layout structure including anti-fuse cell Meng-Sheng Chang, Chia-En Huang, Wan-Hsueh Cheng, Yao-Jen Yang 2024-08-13
12062408 Switches to reduce routing rails of memory system Meng-Sheng Chang, Chia-En Huang, Yi-Ching Liu 2024-08-13
12052859 Non-volatile memory device with reduced area Meng-Sheng Chang, Chia-En Huang, Yao-Jen Yang 2024-07-30
12048147 Layout structure including anti-fuse cell Meng-Sheng Chang, Chia-En Huang, Wan-Hsueh Cheng, Yao-Jen Yang 2024-07-23
12027220 One-time-programmable memory Hiroki Noguchi 2024-07-02
12027204 Memory including metal rails with balanced loading Meng-Sheng Chang, Chia-En Huang, Yi-Ching Liu 2024-07-02
12026404 Memory device for scheduling maximum number of memory macros write operations at re-arranged time intervals Hiroki Noguchi, Shih-Lien Linus Lu, Yu-Der Chih 2024-07-02
12014768 DRAM computation circuit and method Chieh Lee, Chia-En Huang, Yi-Ching Liu, Wen-Chang Cheng 2024-06-18
12010833 Method and structure for reduce OTP cell area and leakage Meng-Sheng Chang, Chia-En Huang, Shao-Yu Chou 2024-06-11
12002534 Memory array word line routing Meng-Han Lin, Chenchen Jacob Wang, Yi-Ching Liu, Han-Jong Chia, Sai-Hooi Yeong +1 more 2024-06-04
12002528 Memory device and operating method of the same Gu-Huan Li, Tung-Cheng Chang, Perng-Fei Yuh, Chia-En Huang, Chun-Ying Lee 2024-06-04
11997843 4CPP SRAM cell and array Hidehiro Fujiwara, Chia-En Huang, Yen-Huei Chen 2024-05-28
11984164 Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells Perng-Fei Yuh, Ku-Feng Lin, Jui-Che Tsai, Hiroki Noguchi, Fu-An Wu 2024-05-14
11978509 Semiconductor memory devices with differential threshold voltages Meng-Sheng Chang, Chia-En Huang 2024-05-07
11978723 Vertical interconnect structures in three-dimensional integrated circuits Tzu-Hsien Yang, Hiroki Noguchi, Hidehiro Fujiwara 2024-05-07
11963463 MRAM cell and MRAM Perng-Fei Yuh 2024-04-16