Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12379674 | Method and apparatus for improving critical dimension variation | Ming-Hsun LIN, Yu-Hsiang Ho, Chi-Hung Liao, Teng Kuei Chuang | 2025-08-05 |
| 11988972 | Method and apparatus for improving critical dimension variation | Ming-Hsun LIN, Yu-Hsiang Ho, Chi-Hung Liao, Teng Kuei Chuang | 2024-05-21 |
| 11579539 | Method and apparatus for improving critical dimension variation | Ming-Hsun LIN, Yu-Hsiang Ho, Chi-Hung Liao, Teng Kuei Chuang | 2023-02-14 |
| 10522413 | Method of forming source/drain contact | Ming-Jhih Kuo, Yu-Hsien Lin, Hung-Chang Hsieh | 2019-12-31 |
| 10163720 | Method of forming source/drain contact | Ming-Jhih Kuo, Yu-Hsien Lin, Hung-Chang Hsieh | 2018-12-25 |
| 9905471 | Integrated circuit structure and method forming trenches with different depths | Yuan-Yen Lo, Jhih-Yu Wang, Hung-Chang Hsieh | 2018-02-27 |
| 9799567 | Method of forming source/drain contact | Ming-Jhih Kuo, Yu-Hsien Lin, Hung-Chang Hsieh | 2017-10-24 |
| 9711367 | Semiconductor method with wafer edge modification | Hung-Chung Chien, Hung-Chang Hsieh, Shu-Fang Chen | 2017-07-18 |
| 9070688 | Method of patterning a semiconductor device having improved spacing and shape control and a semiconductor device | Yu-Lung Tung, Chi-Tien Chen, Hua-Tai Lin, Hsiang-Lin Chen, Hung-Chang Hsieh +1 more | 2015-06-30 |
| 8580637 | Method of patterning a semiconductor device having improved spacing and shape control and a semiconductor device | Yu-Lung Tung, Chi-Tien Chen, Hua-Tai Lin, Hsiang-Lin Chen, Hung-Chang Hsieh +1 more | 2013-11-12 |
| 7960821 | Dummy vias for damascene process | Kuei-Shun Chen, Chin-Hsiang Lin, Vencent Chang, Lawrence Lin, Lai Chien Wen | 2011-06-14 |
| 7939222 | Method and system for improving printing accuracy of a contact layout | Hua-Tai Lin, Lai Chien Wen, Fu-Jye Liang | 2011-05-10 |
| 7767570 | Dummy vias for damascene process | Kuei-Shun Chen, Chin-Hsiang Lin, Vencent Chang, Lawrence Lin, Lai Chien Wen | 2010-08-03 |