Issued Patents All Time
Showing 51–75 of 99 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10707328 | Method of forming epitaxial fin structures of finFET | Kun-Mu Li | 2020-07-07 |
| 10483396 | Interfacial layer between fin and source/drain region | Chih-Yun Chin, Chii-Horng Li, Chien-Wei Lee, Heng-Wen Ting, Roger Tai +5 more | 2019-11-19 |
| 10475926 | MOS devices having epitaxy regions with reduced facets | Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li, Tsz-Mei Kwok | 2019-11-12 |
| 10158016 | MOS devices with non-uniform p-type impurity profile | Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li | 2018-12-18 |
| 10084089 | Source and drain stressors with recessed top surfaces | Kun-Mu Li, Tsz-Mei Kwok, Chii-Horng Li, Tze-Liang Lee | 2018-09-25 |
| 10062781 | MOS devices having epitaxy regions with reduced facets | Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li, Tsz-Mei Kwok | 2018-08-28 |
| 10026662 | Semiconductor structure and fabricating method thereof | Chih-Chiang Chang, Kun-Mu Li | 2018-07-17 |
| 10014411 | Modulating germanium percentage in MOS devices | Tsz-Mei Kwok, Kun-Mu Li, Chii-Horng Li, Tze-Liang Lee | 2018-07-03 |
| 9991364 | Transistor strain-inducing scheme | Tsz-Mei Kwok, Kun-Mu Li, Chii-Horng Li, Tze-Liang Lee | 2018-06-05 |
| 9953836 | Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structure | Tsung-Yao Wen, Sheng-Chen Wang, Sai-Hooi Yeong, Ya-Yun Cheng | 2018-04-24 |
| 9911826 | Devices with strained source/drain structures | Tsz-Mei Kwok, Kuan-Yu Chen, Hsien-Hsin Lin | 2018-03-06 |
| 9853155 | MOS devices having epitaxy regions with reduced facets | Chii-Horng Li, Kun-Mu Li, Tze-Liang Lee, Tsz-Mei Kwok | 2017-12-26 |
| 9842910 | Methods for manufacturing devices with source/drain structures | Tsz-Mei Kwok, Kuan-Yu Chen, Hsien-Hsin Lin | 2017-12-12 |
| 9806171 | Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having different germanium concentration | Tsz-Mei Kwok, Kun-Mu Li, Chii-Horng Li, Tze-Liang Lee | 2017-10-31 |
| 9793404 | Silicon germanium p-channel FinFET stressor structure and method of making same | Liang Chen | 2017-10-17 |
| 9768302 | Semiconductor structure and fabricating method thereof | Chih-Chiang Chang, Kun-Mu Li | 2017-09-19 |
| 9755077 | Source and drain stressors with recessed top surfaces | Kun-Mu Li, Tsz-Mei Kwok, Chii-Horng Li, Tze-Liang Lee | 2017-09-05 |
| 9698243 | Transistor strain-inducing scheme | Tsz-Mei Kwok, Kun-Mu Li, Chii-Horng Li, Tze-Liang Lee | 2017-07-04 |
| 9691898 | Germanium profile for channel strain | Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li | 2017-06-27 |
| 9666691 | Epitaxy profile engineering for FinFETs | Chien-Chang Su, Tsz-Mei Kwok, Hsien-Hsin Lin, Yi-Fang Pai, Kuan-Yu Chen | 2017-05-30 |
| 9666686 | MOS devices having epitaxy regions with reduced facets | Chii-Horng Li, Kun-Mu Li, Tze-Liang Lee, Tsz-Mei Kwok | 2017-05-30 |
| 9601619 | MOS devices with non-uniform P-type impurity profile | Tsz-Mei Kwok, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li | 2017-03-21 |
| 9583483 | Source and drain stressors with recessed top surfaces | Kun-Mu Li, Tsz-Mei Kwok, Chii-Horng Li, Tze-Liang Lee | 2017-02-28 |
| 9515187 | Controlling the shape of source/drain regions in FinFETs | Tsz-Mei Kwok, Chien-Chang Su, Kuan-Yu Chen, Hsien-Hsin Lin | 2016-12-06 |
| 9502561 | Semiconductor devices and methods of forming the same | Chih-Chiang Chang, Kun-Mu Li, Ming-Hua Yu | 2016-11-22 |