Issued Patents All Time
Showing 176–200 of 235 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9401274 | Methods and systems for dopant activation using microwave radiation | Huai-Tei Yang, Kuo-Feng Yu, Kei-Wei Chen | 2016-07-26 |
| 9401302 | FinFET fin bending reduction | Shiang-Rung Tsai | 2016-07-26 |
| 9396986 | Mechanism of forming a trench structure | Sen-Hong Syue, Ziwei Fang | 2016-07-19 |
| 9379208 | Integrated circuits and methods of forming integrated circuits | Su-Hao Liu, Chien-Tai Chan, King-Yuen Wong, Chien-Chang Su | 2016-06-28 |
| 9362175 | Epitaxial growth of doped film for source and drain regions | Jian-An Ke, Tsan-Yao Chen, Chin-Kun Wang | 2016-06-07 |
| 9337316 | Method for FinFET device | Kuo-Feng Yu | 2016-05-10 |
| 9338834 | Systems and methods for microwave-radiation annealing | Zi-Wei Fang, Chao-Hsiung Wang | 2016-05-10 |
| 9299587 | Microwave anneal (MWA) for defect recovery | Clement Hsingjen Wann | 2016-03-29 |
| 9293534 | Formation of dislocations in source and drain regions of FinFET devices | Wei-Yuan Lu, Chien-Tai Chan, Wei-Yang Lee, Da-Wen Lin | 2016-03-22 |
| 9263578 | Semiconductor substructure having elevated strain material-sidewall interface and method of making the same | Wei-Yang Lee, Yuan-Ching Peng | 2016-02-16 |
| 9252008 | Epitaxial formation mechanisms of source and drain regions | Meng-Yueh Liu, Kun-Hsiang Liao | 2016-02-02 |
| 9214556 | Self-aligned dual-metal silicide and germanide formation | Clement Hsingjen Wann, Sey-Ping Sun, Ling-Yen Yeh, Chi-Yuan Shih, Li-Chi Yu +6 more | 2015-12-15 |
| 9209020 | Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same | Tsz-Mei Kwok | 2015-12-08 |
| 9209280 | Methods for doping fin field-effect transistors | Yu-Lien Huang, De-Wei Yu | 2015-12-08 |
| 9184088 | Method of making a shallow trench isolation (STI) structures | Yu-Lien Huang, Chii-Ming Wu, Ziwei Fang | 2015-11-10 |
| 9184089 | Mechanism of forming a trench structure | Tsan-Chun Wang | 2015-11-10 |
| 9142404 | Systems and methods for annealing semiconductor device structures using microwave radiation | Xiong-Fei Yu, Kuo-Feng Yu | 2015-09-22 |
| 9142643 | Method for forming epitaxial feature | Yu-Hung Cheng, Tsz-Mei Kwok, Jeff J. Xu | 2015-09-22 |
| 9129918 | Systems and methods for annealing semiconductor structures | Zi-Wei Fang, Chao-Hsiung Wang | 2015-09-08 |
| 9117844 | Pinch-off control of gate edge dislocation | Tsan-Chun Wang | 2015-08-25 |
| 9117745 | Mechanisms for forming stressor regions in a semiconductor device | Tsan-Chun Wang, Su-Hao Liu, Tsz-Mei Kwok, Chii-Ming Wu | 2015-08-25 |
| 9093468 | Asymmetric cyclic depositon and etch process for epitaxial formation mechanisms of source and drain regions | Tsan-Yao Chen, Jian-An Ke | 2015-07-28 |
| 9076734 | Defect reduction for formation of epitaxial layer in source and drain regions | Chien-Chang Su, Tsz-Mei Kwok | 2015-07-07 |
| 9076762 | Contact structure of semiconductor device | Yan-Ting Lin | 2015-07-07 |
| 9064797 | Systems and methods for dopant activation using pre-amorphization implantation and microwave radiation | Chen-Feng Hsu, Yi-Tang Lin, Clement Hsingjen Wann | 2015-06-23 |