CC

Chao-Cheng Chen

TSMC: 201 patents #73 of 12,232Top 1%
UN Unknown: 2 patents #12,644 of 83,584Top 20%
FP Formosa Plastics: 1 patents #71 of 117Top 65%
NU National Yang-Ming University: 1 patents #58 of 226Top 30%
Overall (All Time): #2,861 of 4,157,543Top 1%
214
Patents All Time

Issued Patents All Time

Showing 201–214 of 214 patents

Patent #TitleCo-InventorsDate
6133145 Method to increase the etch rate selectivity between metal and photoresist via use of a plasma treatment 2000-10-17
6130167 Method of preventing corrosion of a metal structure exposed in a non-fully landed via Hun-Jan Tao, Shu Yang 2000-10-10
6107206 Method for etching shallow trenches in a semiconductor body Li-Chih Chao 2000-08-22
6043163 HCL in overetch with hard mask to improve metal line etching profile Chia-Shiung Tsai, Hun-Jan Tao 2000-03-28
6040248 Chemistry for etching organic low-k materials Ming-Hsin Huang, Hun-Jan Tao, Chia-Shiung Tsai 2000-03-21
6027861 VLSIC patterning process Chen-Hua Yu, Syun-Ming Jang 2000-02-22
6025273 Method for etching reliable small contact holes with improved profiles for semiconductor integrated circuits using a carbon doped hard mask Chia-Shiung Tsai, Hun-Jan Tao 2000-02-15
6008131 Bottom rounding in shallow trench etching using a highly isotropic etching step 1999-12-28
5994229 Achievement of top rounding in shallow trench etch Chia-Shiung Tsai 1999-11-30
5989784 Etch recipe for embedded DRAM passivation with etch stopping layer scheme Yu-Hua Lee, Cheng-Ming Wu 1999-11-23
5981398 Hard mask method for forming chlorine containing plasma etched layer Chia-Shiung Tsai, Hun-Jan Tao 1999-11-09
5970376 Post via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesquioxane spin-on-glass (SOG) dielectric layer 1999-10-19
5942446 Fluorocarbon polymer layer deposition predominant pre-etch plasma etch method for forming patterned silicon containing dielectric layer Chen-Hua Yu 1999-08-24
5807789 Method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI) C. S. Tsai, C. H. Yu 1998-09-15