KH

Konrad Hieber

SA Siemens Aktiengesellschaft: 21 patents #286 of 22,248Top 2%
Overall (All Time): #212,023 of 4,157,543Top 6%
21
Patents All Time

Issued Patents All Time

Showing 1–21 of 21 patents

Patent #TitleCo-InventorsDate
6057229 Method for metallizing submicron contact holes in semiconductor bodies Helmuth Treichel, Heinrich Koerner 2000-05-02
5526122 Method for determining the mass flow of gases on the basis of optical absorption and employment of said method Andreas Intemann, Heinrich Körner 1996-06-11
5478780 Method and apparatus for producing conductive layers or structures for VLSI circuits Heinrich Koerner, Helmuth Treichel, Peter Kuecher 1995-12-26
5399389 Method for locally and globally planarizing chemical vapor deposition of SiO.sub.2 layers onto structured silicon substrates Jasper Von Tomkewitsch, Oswald Spindler, Helmuth Treichel, Zvonimir Gabric, Alexander Gschwandtner 1995-03-21
4810335 Method for monitoring etching processes 1989-03-07
4767496 Method for controlling and supervising etching processes 1988-08-30
4740479 Method for the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memories Franz Neppl, Ulrich Schwabe 1988-04-26
4680612 Integrated semiconductor circuit including a tantalum silicide diffusion barrier Franz Neppl, Konrad Schober 1987-07-14
4673968 Integrated MOS transistors having a gate metallization composed of tantalum or niobium or their silicides Franz Neppl 1987-06-16
4640844 Method for the manufacture of gate electrodes formed of double layers of metal silicides having a high melting point and doped polycrystalline silicon Franz Neppl, Ulrich Schwabe 1987-02-03
4608271 Method for the manufacture of metal silicide layers by means of reduced pressure gas phase deposition Manfred Stolz, Claudia Wieczorek 1986-08-26
4592921 Method for monitoring and regulating the composition and the layer thickness of metallically conductive alloy layers during their manufacture Norbert Mayer 1986-06-03
4562089 Method of measuring electric resistance of thin metallic layers manufactured under the influence of a plasma Norbert Mayer 1985-12-31
4543576 System for measuring electrical resistance and temperature during manufacture of thin, conductive films deposited on substrates by means of evaporation or sputter deposition Norbert Mayer 1985-09-24
4510670 Method for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors Ulrich Schwabe, Franz Neppl 1985-04-16
4501769 Method for selective deposition of layer structures consisting of silicides of HMP metals on silicon substrates and products so-formed Claudia Wieczorek 1985-02-26
4414274 Thin film electrical resistors and process of producing the same 1983-11-08
4351695 Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer Norbert Mayer 1982-09-28
4331702 Method for reproducible manufacture of metallic layers Norbert Mayer 1982-05-25
4294871 Method for depositing a layer on the inside of cavities of a work piece Manfred Stolz 1981-10-13
4258658 CVD Coating device for small parts Alfred Politycki, Manfred Stolz 1981-03-31